EVALUATION OF ENERGY BAND STRUCTURE OF HALF-HEUSLER ALLOY LiZnX (X = As, P, and Sb) USING FIRST PRINCIPLE CALCULATION
Еммануель Еттах,Майкл Е. Ішай,Ксенія Мінакова,Естер Оффіон Асукуо,Стівен У. Одей,Emmanuel Ettah,Michael E. Ishaje,Kseniia Minakova,Esther Offiong Asuquo,Stephen U. Odey
DOI: https://doi.org/10.20998/2413-4295.2023.03.02
2023-10-05
Abstract:The evaluation of energy band structure plays a vital role in understanding the electronic properties of materials. This research, we investigate the energy band structure of Half-Heusler alloys LiZn(X = As, P, and Sb) using a first principle approach based on Density Functional Theory (DFT). These alloys are of particular interest due to their potential applications in thermoelectric and spintronics devices. The corresponding Density of States (DOS) for the tripartite compounds LiZnX (X=As, P, and Sb) have been calculated and the contributions of the Li, Zn, As, P and Sb orbital to the Density of States at ambient pressure. This also confirmed that LiZnX (X=As, P, and Sb) is a semi-conductor with a narrow band-gap between the occupied and unoccupied regions around the Fermi level. The orbitals Li -1s, As-4p, As- 4s, Zn-3d has the highest contributions. The dominant of the orbitals P-1s and P-2p before the Fermi- level and Zn-2p after the Fermi-level are observed. We observed the dominant of the orbitals Sb-1s, Sb-3d, Li-1s, Li-2s, Zn-3d shows weak hybridization and low contribution. This features indicates that the covalent bond between these two atoms is weak, and could be responsible for the mechanical instability observed in the calculation. Meanwhile the band structure calculated and presented has narrow band-gab of 0.625. 0.937 and 0.313 respectively for the tripartite compound LiZnX(X=As, P, and Sb) and its a direct band-gap semiconductor. The obtained energy band structures provide valuable information about the electronic properties of LiZn (X = As, P, and Sb) alloys. The presence of band gaps is crucial for thermoelectric applications, as it indicates the presence of regions where electrons and holes are confined, enabling efficient charge transport.