Strain dependent electronic structure, phonon and thermoelectric properties of CuLiX (X=S,Te) half Heusler compounds

Shakeel Ahmad Khandy,Ishtihadah Islam,Aadil Fayaz Wani,Atif Mossad Ali,M.A. Sayed,Marutheeswaran Srinavasan,Kulwinder Kaur
DOI: https://doi.org/10.1016/j.physb.2024.415698
IF: 2.988
2024-01-22
Physica B Condensed Matter
Abstract:We report the strain dependent electronic, phonon and thermoelectric properties of Li-based Half-Heusler compounds. A direct bandgap of 1.50 eV (for CuLiS) and 1.03 eV (for CuLiTe) is observed from HSE calculations. CuLiX (X = S,Te) in their conventional structure are mechanically and dynamically stable semiconductors. However, the compression beyond −15 % (for CuLiS) and −10 % (for CuLiTe) destabilizes the crystal structure due to the overlapping of atomic charge spheres. At the same time, expansion above 4 % produces instability in both systems. The maximum value of Seebeck coefficient significantly increases from ∼1500 μ/VK in both alloys ∼2400 μ/VK in CuLiS and ∼2000 μ/VK in CuLiTe after the application of 5 % compressive strain at 300 K. These alloys achieve maximized thermoelectric efficiency via strain engineering, and thus require further experimental research.
physics, condensed matter
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