Magnetic-Field-Dependent Carrier Injection at La2/3Sr1/3MnO3/ and Organic Semiconductors Interfaces

D Wu,ZH Xiong,XG Li,ZV Vardeny,J Shi
DOI: https://doi.org/10.1103/physrevlett.95.016802
2006-01-01
Physics
Abstract:We have fabricated organic diodes utilizing several pi-conjugated organic semiconductors (OSEC) as spacer layers between La2/3Sr1/3MnO3 (LSMO) and various metallic electrodes, and measured their magnetoresistance (MR) and magnetoelectroluminescence (MEL) responses. The devices exhibit large negative high-field MR responses that resemble the MR response of the LSMO electrode, but amplified by approximately 3 orders in the resistance, and accompanied by a positive high-field MEL effect. These magnetic-field effects result from enhanced carrier injection at the LSMO-OSEC interface that is attributed to the anomalous field-dependent Fermi level shift in LSMO.
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