Effect of SiO 2 on optical properties of bismuth-doped B 2 O 3 –GeO 2 –SiO 2 glasses
Zhousu Xu,Jinhua Yan,Cheng Xu,Hang Zhang,Gang Chen,Xiaofeng Liu,Jianrong Qiu
DOI: https://doi.org/10.1007/s00340-018-7044-4
2018-01-01
Applied Physics B
Abstract:Bi-doped (60- x )GeO 2 – x SiO 2 –15B 2 O 3 –20MgO–5Al 2 O 3 –0.5Bi 2 O 3 ( x = 0, 5, 10, 15,20, 25 mol%)glasses were prepared by a conventional melt-quenching process. A broad near-infrared (NIR) photoluminescence (PL) band from Bi centers centered around 1100 nm with a large full-width-at-half-maximum value (~ 195 nm) was observed under excitation at 700 nm. Along with the increase of SiO 2 concentration, the NIR PL intensity and the quantum yield (44.1–51.2%) increase first and then decrease, and the PL lifetime increases from 409 to 464 µs. The spectroscopic properties can be interpreted in terms of Bi centers with different valence states, which were confirmed by two-dimension photoluminescence excitation map spectra. The dependence of optical properties on SiO 2 concentration is mainly attributed to the change of the optical basicity among different samples. This Bi-doped B 2 O 3 –GeO 2 –SiO 2 glass could find potential application in fiber amplifier and laser due to the efficient and tunable broad NIR luminescence.