Abstract:InAs1-xSbx is a unique semiconductor as it possesses the lowest bandgap (Eg) of the conventional III–V materials, yielding emission out to nearly 15 μm at room temperature. As such, it is well-suited as the absorber material in long-wavelength infrared (IR) applications such as chemical sensing and large format IR imaging. However, the compositions at the longest wavelengths are significantly lattice-mismatched to conventional substrates. Overcoming this lattice-mismatch requires using thick graded buffers, and to date, little work has focused on the effect of growth conditions on the Sb-incorporation or optical quality of the longest-wavelength InAs1-xSbx materials. Here, the authors investigate the molecular beam epitaxy (MBE) growth of this potential absorber material by using solid source MBE to grow InAs1-xSbx on step-graded buffers on GaSb substrates. The authors have achieved cap-layer compositions as high as x ≈ 0.55 under various substrate temperatures (Tsub) and V/III beam equivalent pressure ratios. By using InAs1-xSbx as the grading material as well as the cap material, the authors can measure Sb-content as a function of growth conditions over many compositions. The author's results show good agreement between x and Eg compared with previous reports, obtaining T = 8 K photoluminescence (PL) emission approaching 11 μm. However, the authors also found that Sb-incorporation falls off for x > 0.2 and worsens with increasing Tsub, suggesting that Sb-incorporation rates increase with reduced adatom mobility. Additionally, the PL of the samples show improved intensity when either Tsub or V/III were increased, while cross-sectional transmission electron microscopy revealed a significant decrease in threading dislocation density with increased V/III. Ultimately, the authors found that under the proper growth conditions, optically active InAs1-xSbx with x over 0.55 can be attained, and with an optimized grading structure, could be a low-cost alternative to HgCdTe for long-wavelength infrared optoelectronics.

Determination of the fundamental and spin-orbit-splitting band gap energies of InAsSb-based ternary and pentenary alloys using mid-infrared photoreflectance

Midinfrared Photoreflectance Study of Inas-Rich Inassb and Gainaspsb Indicating Negligible Bowing for the Spin Orbit Splitting Energy

Photoreflectance Study Of N- And Sb-Related Modifications Of The Energy Gap And Spin-Orbit Splitting In Innassb Alloys

Electronic and optical properties of InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattices and their application to far-infrared detectors

Ab initio calculations of indium arsenide in the wurtzite phase: structural, electronic and optical properties

Interband Transitions of InAs/AlAs Short-Period Superlattices Grown by Molecular Beam Epitaxy

First principles studies on infrared band structure and absorption of As/Sb lateral heterostructures

Photoluminescence and Bowing Parameters of InAsSb∕InAs Multiple Quantum Wells Grown by Molecular Beam Epitaxy

Sb-incorporation in MBE-grown metamorphic InAsSb for long-wavelength infrared applications

$g$-factor engineering with InAsSb alloys toward zero band gap limit

Exploring the optical property of InAs1−xSbx-based nBn structures for high-temperature mid-wave infrared detection

Phase diagrams and critical temperatures for coherent and incoherent mixtures of InAs1−xSbx alloys using first-principles calculations

Bandgap and Band Offsets Determination of Semiconductor Heterostructures Using Three-Terminal Ballistic Carrier Spectroscopy

Optical transitions in new semiconductor alloy GaAs/sub 1-x/Bi/sub x/ with temperature-insensitive band gap

Opto‐Electronic Properties of Gap1‐xSbx Alloys for IR Applications

Ab initio calculation of band edges modified by (001) biaxial strain in group IIIA–VA and group IIB–VIA semiconductors: Application to quasiparticle energy levels of strained InAs/InP quantum dot

Study of ab initio calculations of structural, electronic and optical properties of ternary semiconductor alloys

Study of the type-I to type-II band alignment transition in InAs(Sb)/GaAs quantum dot nanostructures

First-principles Study of InAs, InxGa1−xSb Nanotubes and InAs/InxGa1−xSb Nanotube Superlattices

One-Electron Spectrum of a Short-Period InAs/GaSb Superlattice with Interface Compensation of Strains

Mapping of Electronic Band Gap along the Axis of Single InAs/InSbxAs1-x Heterostructured Nanowire