Hybrid High-Temperature-Superconductor-Semiconductor Tunnel Diode
Alex Hayat,Parisa Zareapour,Shu Yang F. Zhao,Achint Jain,Igor G. Savelyev,Marina Blumin,Zhijun Xu,Alina Yang,G. D. Gu,Harry E. Ruda,Shuang Jia,J. Cava,Aephraim M. Steinberg,Kenneth S. Burch
DOI: https://doi.org/10.1103/physrevx.2.041019
2012-01-01
Physical Review X
Abstract:We report the demonstration of hybrid high-T-c-superconductor-semiconductor tunnel junctions, enabling new interdisciplinary directions in condensed matter research. The devices are fabricated by our newly developed mechanical-bonding technique, resulting in high-T-c-superconductor-semiconductor tunnel diodes. Tunneling-spectra characterization of the hybrid junctions of Bi2Sr2CaCu2O8+delta combined with bulk GaAs, or a GaAs/AlGaAs quantum well, exhibits excess voltage and nonlinearity, similarly to spectra obtained in scanning-tunneling microscopy, and is in good agreement with theoretical predictions for a d-wave-superconductor-normal-material junction. Additional junctions are demonstrated using Bi2Sr2CaCu2O8+delta combined with graphite or Bi2Te3. Our results pave the way for new methods in unconventional superconductivity studies, novel materials, and quantum technology applications. DOI: 10.1103/PhysRevX.2.041019