Lattice Orientation Heredity in the Transformation of 2D Epitaxial Films
Xiangming Xu,Jasmin Smajic,Kuang‐hui Li,Jung‐Wook Min,Yongjiu Lei,Bambar Davaasuren,Xin He,Xixiang Zhang,Boon S. Ooi,Pedro M. F. J. Costa,Husam N. Alshareef
DOI: https://doi.org/10.1002/adma.202105190
IF: 29.4
2021-12-06
Advanced Materials
Abstract:The ability to control lattice orientation is often an essential requirement in the growth of both 2D van der Waals (vdW) layered and nonlayered thin films. Here, a unique and universal phenomenon termed "lattice orientation heredity" (LOH) is reported. LOH enables product films (including 2D-layered materials) to inherit the lattice orientation from reactant films in a chemical conversion process, excluding the requirement on the substrate lattice order. The process universality is demonstrated by investigating the lattice transformations in the carbonization, nitridation, and sulfurization of epitaxial MoO<sub>2</sub> , ZnO, and In<sub>2</sub> O<sub>3</sub> thin films. Their resultant compounds all inherit the mono-oriented crystal feature from their precursor oxides, including 2D vdW-layered semiconductors (e.g., MoS<sub>2</sub> ), metallic films (e.g., MXene-like Mo<sub>2</sub> C and MoN), wide-bandgap semiconductors (e.g., hexagonal ZnS), and ferroelectric semiconductors (e.g., In<sub>2</sub> S<sub>3</sub> ). Using LOH-grown MoN as a seeding layer, mono-oriented GaN is achieved on an amorphous quartz substrate. The LOH process presents a universal strategy capable of growing epitaxial thin films (including 2D vdW-layered materials) not only on single-crystalline but also on noncrystalline substrates.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology