Stochastic Aware Modeling of Voltage Controlled Magnetic Anisotropy MRAM
Bowen Wang,Fernando García-Redondo,Marie Garcia Bardon,Hyungrock Oh,Mohit Gupta,Woojin Kim,Diego Favaro,Yukai Chen,Wim Dehaene
DOI: https://doi.org/10.1109/tnano.2024.3361718
2024-01-01
IEEE Transactions on Nanotechnology
Abstract:This paper presents a physics-based compact model for Voltage-Controlled Magnetic Anisotropy (VCMA) MRAM, calibrated against fabricated devices. Our model addresses inherent stochasticity, offering a robust tool for the design and simulation of VCMA MRAM peripheral circuits. Achieving a tenfold increase in simulation speed compared to existing stochastic Landau-Lifshitz-Gilbert-Slonczewski (sLLGS) based models (10× to 100×), and overcoming accuracy problems related to VCMA macro-spin sLLGS simulations, our approach enables efficient exploration of MRAM based circuits. The model efficiency and accuracy are demonstrated through a practical use case.
engineering, electrical & electronic,materials science, multidisciplinary,nanoscience & nanotechnology,physics, applied