Quasiperiodic a-Si:H/a-SiNx:H multilayer structures
Chen Kunji,Mao Guomin,Feng Duan,Yan Ying,Du Jiafang,Li Zhifeng,Chen Hong,H. Fritzsche
DOI: https://doi.org/10.1016/0022-3093(87)90081-0
IF: 4.458
1987-01-01
Journal of Non-Crystalline Solids
Abstract:We report the first realization of an amorphous semiconductor quasiperiodic superlattice. The sample, grown by rf glow discharge technique, consists of alternating ultrathin layers of a-Si:H and a-SiNx:H to form a Fibonacci sequence. We have verified this novel structure using the cross-section TEM micrograph and diffraction pattern. The remarkable sharpness of the diffraction spots indicates a high coherency in the spatial interference, comparable to the one in periodic superlattices. The difference of dc conductance between periodic and quasiperiodic superlattices has been also studied.