Abstract:Optical proximity correction (OPC) methods are resolution enhancement techniques (RET) used extensively in the semiconductor industry to improve the resolution and pattern fidelity of optical lithography. In pixel-based OPC (PBOPC), the mask is divided into small pixels, each of which is modified during the optimization process. Two critical issues in PBOPC are the required computational complexity of the optimization process, and the manufacturability of the optimized mask. Most current OPC optimization methods apply the steepest descent (SD) algorithm to improve image fidelity augmented by regularization penalties to reduce the complexity of the mask. Although simple to implement, the SD algorithm converges slowly. The existing regularization penalties, however, fall short in meeting the mask rule check (MRC) requirements often used in semiconductor manufacturing. This paper focuses on developing OPC optimization algorithms based on the conjugate gradient (CG) method which exhibits much faster convergence than the SD algorithm. The imaging formation process is represented by the Fourier series expansion model which approximates the partially coherent system as a sum of coherent systems. In order to obtain more desirable manufacturability properties of the mask pattern, a MRC penalty is proposed to enlarge the linear size of the sub-resolution assistant features (SRAFs), as well as the distances between the SRAFs and the main body of the mask. Finally, a projection method is developed to further reduce the complexity of the optimized mask pattern.

Generalized Inverse Lithography Methods for Phase-Shifting Mask Design

PSM design for inverse lithography with partially coherent illumination.

Gradient-Based Resolution Enhancement Optimization Methods Based on Vector Imaging Model

Optimal 3D Phase-Shifting Masks in Partially Coherent Illumination.

Pixel-based Simultaneous Source and Mask Optimization for Resolution Enhancement in Optical Lithography

Mask Optimization Approaches in Optical Lithography Based on a Vector Imaging Model

Robust Resolution Enhancement Optimization Methods to Process Variations Based on Vector Imaging Model

Vectorial Mask Optimization Methods for Robust Optical Lithography

Resolution Enhancement Optimization Methods in Optical Lithography with Improved Manufacturability

Pixel-based OPC Optimization Based on Conjugate Gradients.

Binary Mask Optimization for Inverse Lithography with Partially Coherent Illumination

Efficient Mask Design for Inverse Lithography Technology Based on 2D Discrete Cosine Transformation (DCT)

Source and Mask Co-Optimization Using A Gradient Based Method in Optical Lithography

Design of Phase-Shifting Masks for Enhancing Resolution of Images in Optical Lithography

An analytic gradient-based inverse lithography approach for partially-coherent double-exposure lithography

Design of Phase–shifting Masks for Enhanced–resolution Optical Lithography

Informatics-based Computational Lithography for Phase-Shifting Mask Optimization

Gradient-Based Source And Mask Optimization In Optical Lithography

Binary Mask Optimization for Forward Lithography Based on Boundary Layer Model in Coherent Systems

Fast Level-Set-Based Inverse Lithography Algorithm for Process Robustness Improvement and Its Application

DIRECT: An Efficient Optimization Scheme for Mask Generation Using Inverse Lithography