Abstract:Polarization‐dependent Raman spectroscopy was conducted on single‐crystalline quasi‐one‐dimensional NbTe4 and TaTe4 van der Waals materials. The data revealed a significant intensity contrast in the phonon spectra of the two materials despite their identical crystal structures: While TaTe4 displayed well‐defined Raman peaks in the examined temperature range, NbTe4 exhibited weak signatures. The phonon peak positions agree with the density‐functional theory calculations. We offer possible reasons for the intensity differences between the two materials considering their charge‐density‐wave properties. We report the results of polarization‐dependent Raman spectroscopy of phonon states in single‐crystalline quasi‐one‐dimensional NbTe4 and TaTe4 van der Waals materials. The measurements were conducted in the wide temperature range from 80 to 560 K. Our results show that although both materials have identical crystal structures and symmetries, there is a drastic difference in the intensity of their Raman spectra. While TaTe4 exhibits well‐defined peaks through the examined wavenumber and temperature ranges, NbTe4 reveals extremely weak Raman signatures. The measured spectral positions of the phonon peaks agree with the phonon band structure calculated using the density‐functional theory. We offer possible reasons for the intensity differences between the two van der Waals materials. Our results provide insights into the phonon properties of NbTe4 and TaTe4 van der Waals materials and indicate the potential of Raman spectroscopy for studying charge‐density‐wave quantum condensate phases.

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