Memristor-based RRAM with Applications

ShuKai Duan,XiaoFang Hu,LiDan Wang,ChuanDong Li,Pinaki Mazumder

DOI: https://doi.org/10.1007/s11432-012-4572-0

2012-01-01

Science China Information Sciences

Abstract:Recently acclaimed the fourth fundamental circuit element,the memristor was theoretically pre-dicted by Leon Chua in 1971,although its single device electronic implementation eluded the attention of inte-grated circuit designers for the past three decades and was first reported in 2008 by the Hewlett-Packard (HP) Laboratory researchers while developing crossbar-based ultra high-density nonvolatile memories.Memristor-based hybrid nanoscale CMOS technology is expected not only to impact the flash memory industries pro-foundly,but also to revolutionize digital and neuromorphic computing.The memristor exhibits a dynamical resistance state that depends on its excitation history and which can be exploited to build transistor-less non-volatile semiconductor memory (NVSM),commonly known as resistive RAM (RRAM).This paper addresses an implementation scheme for memristor-based resistive random access memory (MRRAM),a nano-scale binary memory that is compatible with modern computer systems.Its structure is similar to that of static random ac-cess memory (SRAM),but with the memristor replacing the underlying RS flip-flop.By improving the MRRAM,we propose a multilevel memory with greater data density,which stores multiple bit information in gray-scale form in a memory unit.Reported computer simulations and numerical analyses verify the effectiveness of the proposed scheme in storing ASCII characters and gray-scale images in binary format.