The Level-Shifting-Induced Negative Magnetoresistance in the Nearest-Neighbor Hopping Conduction

XR Wang,SC Ma,XC Xie
DOI: https://doi.org/10.1209/epl/i1999-00173-x
1999-01-01
EPL (Europhysics Letters)
Abstract:We propose a new mechanism of negative magnetoresistance in non-magnetic granular materials in which electron transport is dominated by hopping between two nearest-neighbor clusters. We study the dependence of magnetoresistance on temperature and separation between neighboring clusters. At a small separation we find a negative magnetoresistance at low temperatures and it changes over to a positive value as temperature increases. For a fixed temperature, magnetoresistance changes from negative to positive when the cluster separation increases. The change of magnetoresistance ΔR/R can be more than 80 % at low temperatures.
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