Exchange Splitting Mechanism of Negative Magnetoresistance in Layered Antiferromagnetic Semimetals

P. D. Grigoriev,N. S. Pavlov,I. A. Nekrasov,I. R. Shein,A. V. Sadakov,O. A. Sobolevskiy,E. Maltsev,N. Perez,L. Veyrat,V. M. Pudalov
2024-05-28
Abstract:Layered topologically non-trivial and trivial semimetals with AFM-type ordering of magnetic sublattice are known to exhibit a negative magnetoresistance that is well correlated with AFM magnetization changes in a magnetic field. This effect is reported in several experimental studies with EuFe$_2$As$_2$, EuSn$_2$As$_2$, EuSn$_2$P$_2$, etc., where the resistance decreases quadratically with field by about $\delta\rho/\rho \sim 4-6\%$ up to the spin-polarization field. Despite the fact that this effect is well documented experimentally, its theoretical explanation is missing up to date. In this paper we propose a novel theoretical mechanism describing the observed magnetoresistance that does not imply either topological origin of the materials, surface roughness, their potential defect structure, or electron-magnon scattering. We believe, the proposed intrinsic mechanism of magnetoresistance is applicable to a wide class of the layered AFM- ordered semimetals. The theoretically calculated magnetoresistance is qualitatively consistent with experimental data for crystals of various composition.
Mesoscale and Nanoscale Physics,Materials Science,Strongly Correlated Electrons
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