Potential of a Class of Microchip Nd:Gd x Y 1 −x VO 4 Crystal Lasers for Short Laser Pulse Generation
Shuo Han,Yanqing Liu,Fang Zhang,Ying Zhou,Huaijin Zhang,Zhengping Wang,Xinguang Xu
DOI: https://doi.org/10.1007/s10946-015-9512-1
IF: 0.81
2015-01-01
Journal of Russian Laser Research
Abstract:We report subnanosecond passively Q-switched Nd:Gd x Y1−x VO4 (x = 0, 0.18, 0.42, 0.51, 0.64, 1) microchip lasers. To the best of our knowledge, this is the first demonstration of subnanosecond mixed-vanadate-crystal microchip lasers. Compared with Nd:GdVO4 and Nd:YVO4 lasers, we obtain enhanced peak power by the microchip lasers proposed and elaborated. Using a Cr4+:YAG crystal with initial transmission of 77%, we achieve the shortest pulse duration of 588 ps, highest pulse energy of 30 μJ, and peak power of 48 kW.