On the Mössbauer isomer-shift studies of the electronic structure of semiconductors

Emil Antoncik,Bing-lin Gu
DOI: https://doi.org/10.1016/0378-4363(83)90443-6
1983-01-01
Physica B+C
Abstract:The Mössbauer isomer shift provides a unique technique for studying the electronic structure of solids on the atomic scale and in many cases makes it possible to check the accuracy of the wave functions resulting from either the band-structure calculations or the solution of the impurity problem. Using a Green-function procedure based on a modified tight-binding method, the electronic configuration and the relevant isomer-shift values have been evaluated for several physically interesting cases. In particular, 119Sn, 121Sb, and 125Te, representing either one of the components or an impurity in various ANB8−N semiconducting materials, are considered, and their local structure is discussed in detail.
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