Electrical Transport Measurements of Nanotubes with Known (n, M) Indices

Bhupesh Chandra,Robert Caldwell,Mingyuan Huang,Limin Huang,Matthew Y. Sfeir,Stephen P. O'Brien,Tony F. Heinz,James Hone
DOI: https://doi.org/10.1002/pssb.200669130
2006-01-01
Abstract:Because subtle changes in physical structure (chirality) can cause the electronic structure of carbon nano-tubes to vary from metallic to semiconducting, the goal of fully controlled nanotube device fabrication has proved elusive. Using a mechanical transfer technique in parallel with optical characterization, we have achieved the goal of placing 'the nanotube we want, where we want it'. Long nanotubes are grown by CVD across a slit etched through a Si wafer and then examined by Rayleigh scattering. By combining this technique with structural characterization by electron diffraction, we are able to map each spectrum to a unique (n, m) structure. After structural characterization, a chosen nanotube can be transferred to a substrate in the desired location, and devices fabricated using standard e-beam lithography techniques. We have fabricated a number of devices in this manner and are beginning to fully explore the detailed relationship between structure and transport. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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