Temperature-dependent Shifts of Near Band-Edge Emission and Their Second-Order Diffraction for ZnO Nanorods
Jianguo Lv,Changlong Liu,Wanbing Gong,Zhenfa Zi,Xiaoshuang Chen,Kai Huang,Tao Wang,Gang He,Shiwei Shi,Xueping Song,Zhaoqi Sun
DOI: https://doi.org/10.1016/j.optmat.2012.05.030
IF: 3.754
2012-01-01
Optical Materials
Abstract:The crystal structure and morphology of ZnO, grown on silicon substrate by two-step method, were measured by X-ray diffraction and field emission scanning electron microscopy. The results reveal that the sample is mainly composed of ZnO nanorods and preferentially oriented in the c-axis direction. The photoluminescence properties of the ZnO nanorods were investigated over the temperatures from 10 K to 297 K. There exist three emission bands in near band-edge, green-yellow-orange-red and near-infrared, respectively. Donor bound exciton ((DX)-X-0) and its phonon replicas emission peaks were observed in low temperature photoluminescence (PL). The (DX)-X-0 and its phonon replicas peak intensity decreased with the increase of temperature and disappeared when the temperature increased up to 87 K. The decay in the (DX)-X-0 and its phonon replicas emission peak intensity stemmed from the thermal dissociation of (DX)-X-0 to free exciton. Temperature-dependent second-order diffraction of the near band-edge emissions were investigated in detail. (C) 2012 Elsevier B.V. All rights reserved.