Resistant Behavior of a Novel Silica-Based Octyl(phenyl)-N,n-diisobutyl Carbamoylmethylphoshine Oxide Neutral Extraction Resin Against Nitric Acid, Temperature and Γ-Radiation

AY Zhang,YZ Wei,M Kumagai,Y Koma,T Koyama
DOI: https://doi.org/10.1016/j.radphyschem.2004.01.004
IF: 2.776
2005-01-01
Radiation Physics and Chemistry
Abstract:The resistant behavior of a novel silica-based octyl(phenyl)-N,N-diisobutylcarbamoyl-methylphoshine oxide (CMPO) extraction resin (CMPO/SiO2-P) against HNO3, temperature and γ-radiation had been investigated. The adsorption properties of the treated CMPO/SiO2-P resin were evaluated by a 3M HNO3 solution containing 0.01M Nd(III). It was found that 3M or 0.01M HNO3 concentration did not decrease the stability of CMPO/SiO2-P at 25°C. The HNO3 concentration effect on the leakage of CMPO/SiO2-P resin at 80°C was obviously higher than that of at 25°C. The adsorbed amount of Nd(III) onto the treated CMPO/SiO2-P resin was determined in the range of 0.1769–0.1839mmol/g, which basically approached to 0.1875mmol/g, the adsorbed quantity of fresh CMPO/SiO2-P resin for Nd(III). The contents of P and C leaked from CMPO/SiO2-P resin obviously increased with an increase in the radiation dose (ID) from 1.0 to 4.1MGy in terms of the linear equations: [P]=110.05ID+21.92 and [C]=7683.8ID−919.8. The adsorbed amount of Nd(III) onto the radiated CMPO/SiO2-P resin quickly decreased from 0.1499 to 0.0900mmol/g according to the equation QNd(III)=−0.0222ID+0.1778, showing a large quantity of CMPO leaked from CMPO/SiO2-P resin.
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