New organic semiconductors for thin-film transistors: Synthesis, characterization, and performance of 4H-indeno[1,2-b]thiophene derivatives

Chunchang Zhao,Xiaohong Chen,Cen Gao,Man-Kit Ng,Huanjun Ding,Kiwan Park,Yongli Gao
DOI: https://doi.org/10.1016/j.synthmet.2009.01.011
IF: 4
2009-01-01
Synthetic Metals
Abstract:UPS and IPES study and FET performance show that the new hybrid polycyclic aromatic 4H-indeno[1,2-b]thiophene derivatives (DIT-nT) are good p-type materials. With increasing the π-conjugation length, the hole injection into DIT-2T is more facile than that into DIT-0T, and the highest FET value was obtained for the longest oligomer DIT-2T.
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