Selective Growth Of Co Nanoislands On An Oxygen-Patterned Ru(0001) Surface

H. Ding,A. Schmid,D. Keavney,Dongqi Li,R. Cheng,J. Pearson,F. Fradin,S. Bader
DOI: https://doi.org/10.1103/PhysRevB.72.035413
IF: 3.7
2005-01-01
Physical Review B
Abstract:We present a combined low energy electron microscopy and photoemission electron microscopy study of Co nanoislands grown on pure and partially oxidized Ru(0001) surfaces at 650-850 K. When Co is deposited on pure Ru(0001) at the temperature above approximate to 700 K, it first forms a wetting monolayer and then Co nanoislands abruptly nucleate. Partial oxidization of the clean Ru(0001) surface gives rise to large rhombus-shaped Ru-O patches (of 10 mu m scale). On this surface at approximate to 730 K the Co islands form with different density in the Ru and Ru-O regions, and at approximate to 800 K the Co islands only grow in the pure Ru regions. We attribute this selectivity to differences in the temperature dependence of the sticking coefficients for Co on the pure Ru and Ru-O regions.
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