Abstract:Purpose:Silicon photomultiplier (SiPM) has recently emerged as a promising photodetector for biomedical imaging applications. Due to its high multiplication gain (comparable to PMT), fast timing, low cost and compactness, it is considered a good candidate for photon counting CT. Dark noise is a limiting factor which impacts both energy resolution and detection dynamic range. Our goal is to develop a comprehensive model for noise sources for SiPM sensors.Methods:The physical parameters used in this work were based upon a test SPAD fabricated in 130nm CMOS process. The SPAD uses an n+/p‐well junction, which is isolated from the p‐substrate by a deep n‐well junction. Inter‐avalanche time measurement was used to record the time interval between two adjacent avalanche pulses. After collecting 1×106 counts, the histogram was obtained and multiple exponential fitting process was used to extract the lifetime associated with the traps within the bandgap.Results:At room temperature, the breakdown voltage of the SPAD is ∼11.4V and shows a temperature coefficient of 7.7mV/°C. The dark noise of SPAD increases with both the excess biasing voltage and temperature. The primary dark counts from the model were validated against the measurement results. A maximum relative error of 8.7% is observed at 20 °C with an excess voltage of 0.5V. The probabilities of after‐pulsing are found to be dependent of both temperature and excess voltage. With 0.5V excess voltage, the after‐pulsing probability is 63.5% at ‐ 30 °C and drops to ∼6.6% at 40 °C.Conclusion:A comprehensive noise model for SPAD sensor was proposed. The model takes into account of static, dynamic and statistical behavior of SPADs. We believe that this is the first SPAD circuit simulation model that includes the band‐to‐band tunneling dark noise contribution and temporal dependence of the after‐pulsing probability.

Research on Photon Counting Imaging Technology

Research on Photon Counting Image Technology Based on APD Arrays

The Photon Detection Mode of Photomultiplier Tubes Considering the Pulse Height Distribution

Monte Carlo Simulation and Implementation of Photon Counting Image Based on APD

Experimental study on photon counting imaging system based on avalanche photodiode

Photon Counting Correction Method to Improve the Quality of Reconstructed Images in Single Photon Compressive Imaging Systems.

Photon counting imaging based on GM-APD

Design and experiments of photon counting imaging test platform

The Performance of Photon Counting Imaging with A Geiger Mode Silicon Avalanche Photodiode

Design of Photon-counting Detection and Imaging Experimental Setup

Experimental Study of Photo Counting Imaging Based on APD

A Smart and High-Sensitivity Photon Counting Imaging Device Based on Solid State APD

Single-photon Time Response of Reach-Through APD

Impact of Sampling Time on Photon Counting Image

TH‐CD‐207B‐07: Noise Modeling of Single Photon Avalanche Diode (SPAD) for Photon Counting CT Applications

On the basic mechanism of Pixelized Photon Detectors

Post-processing Free Quantum Random Number Generator Based on Avalanche Photodiode Array

Photon counting ghost imaging using non-Poisson light source

Simulation of the Avalanche Process in the G-APD and Circuitry Analysis of the SiPM

A Computational Model of a Single-Photon Avalanche Diode Sensor for Transient Imaging

Modeling Charge Transport in Photon-Counting Detectors