A promising red phosphor MgMoO4:Eu3+ for white light emitting diodes

Li-Ya Zhou,Jian-She Wei,Ling-Hong Yi,Fu-Zhong Gong,Jun-Li Huang,Wei Wang
DOI: https://doi.org/10.1016/j.materresbull.2008.11.019
IF: 5.6
2009-01-01
Materials Research Bulletin
Abstract:Motivated by the need for new red phosphors for solid-state lighting applications Eu3+-doped MgMoO4 was prepared by solid-state reaction and its excitation and emission spectra were measured at room temperature. In addition, the effects of firing temperature and Eu3+ doping concentration on the PL intensities were also investigated. Compared with Y2O2S:0.05Eu3+, the obtained Mg0.80MoO4:Eu3+0.20 phosphor shows a stronger excitation band near 400nm and intensely red-emission lines at 616nm correspond to the forced electric dipole 5D0→7F2 transitions on Eu3+ under 394nm light excitation. The CIE chromaticity coordinates (x=0.651, y=0.348) of Mg0.80MoO4:Eu3+0.20 close to the NTSC (National Television Standard Committee) standard values, and therefore may find application on near UV InGaN chip-based white light emitting diodes.
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