Abstract:Using the method of transient capacitance at constant temperature, the shift of gold acceptor energy level in silicon under 〈100〉,〈110〉,〈111〉 uniaxial press has been studied. Considering the split of conduction band caused by uniaxial stress, a formula for electron emission rate from deep center to conduction band has been derived. With this formula and experimental data of emission rate and reported tangential deformation potential constant Ξu ,the active energy of gold acceptor under various uniaxial stress has been determined. In the range of experimental stress (0-9 kbar), a linear dependence of active energy on stress has been found. When uniaxial presses are parallel to 〈110〉,〈111〉 crystal orientations, the proportionality constants are α=-3.2±0.6 meV/kbar, α=-0.3±0.6 meV/kbar respectively. When uniaxial press is parallel to 〈100〉 crystal orientation and if we take Ξu = 9.2 eV, α= -5.8± 0.8 meV/kbar, or if Ξu =11.4 eV, α=-5.3± 0.8 meV/kbar. The changes of active energy are strongly anis-otropic. Further more, we have determined the shift coefficients of gold acceptor level in the presence of uniaxial stress relative to the bottom of conduction band in the absence of uniaxial stress. When Ξu=9.2 eV, the coefficients are S=-1.3±0.8 meV/kbar, S=0.7±0.6 meV/kbar, S=-0.7±0.6 meV/kbar respectively, when Ξu=11.4 eV, the values are S= - 3.5± 0.8 meV/kbar, S = 0.0±0.6 meV/kbar, S=- 1.0±0.6 meV/kbar. Deviations among three coefficients of each group are larger than uncertainty of experiments. Thus, the possibility that gold centers in silicon have cubic symmetry and at the same time both negatively charged and neutral gold centers have nondegenerate basic states is quite small.

The preferential alignment of negatively and neutrally charged A-centers in silicon under 〈100〉 uniaxial stress

Shifts and Splittings of Electron-Energy Levels of A-Centers in Silicon under Uniaxial-Stress

Discrimination of Dislocations in 4H-Sic by Inclination Angles of Molten-Alkali Etched Pits

High Strain Gradient Plasticity Associated with Wedge Indentation into Face-Centered Cubic Single Crystals: Geometrically Necessary Dislocation Densities

Dirac Points And Van Hove Singularities Of Silicene Under Uniaxial Strain

A STUDY OF TRANSIENT CAPACITANCE OF GOLD ACCEPTOR ENERGY LEVEL IN SILICON UNDER UNIAXIAL STRESS

New insights of the strength asymmetry in FCC single-crystalline nanopillars

Experimental Determination of the Dipole Orientation of Single Color Centers in Silicon Carbide

Uniform, Axial‐Orientation Alignment of One‐Dimensional Single‐Crystal Silicon Nanostructure Arrays

Anomalous tension–compression asymmetry in amorphous silicon: insights from atomistic simulations and elastoplastic constitutive modeling

Formation Mechanism of Stress-Induced Anisotropy in Stress-Annealed Fe-based Nanocrystalline Ribbon Alloys

Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

The Stability of Fcc Crystal Cu under Uniaxial Loading in [001] Direction

Grain-orientation induced stress formation in AA2024 monocrystal and bicrystal using Crystal Plasticity Finite Element Method

Influence of Grain Orientation and Grain Boundary Features on Local Stress State of Cu-8Al-11Mn Alloy Investigated Using Crystal Plasticity Finite Element Method

Mechanical stress dependence of the Fermi level pinning on an oxidized silicon surface

Anomalous change of electronic properties for uniaxial-strained LaAlO3/SrTiO3 (001) heterostructure

Dangling bonds, the charge neutrality level, and band alignment in semiconductors

Atomistic Simulation Study of the FCC and BCC Crystal-Melt Interface Stresses

A systematic investigation of the development of the orientation relationship in an fcc/bcc system

Optimization of effective electron mass in strained silicon nanosheets