Research on two typical intense current self-pinching diodes

Yang Hailiang,Qiu Aici,Sun Jianfeng,Gao Yi,Su Zhaofeng,Li Jingya,Sun Fengju,Liang Tianxue,Yin Jiahui,Cong Peitian,Huang Jianjun,Ren Shuqing
2009-01-01
Engineering Sciences
Abstract:Structures of several types of intense pinching diodes were introduced.The latest simulation and experiment results on rod pinch focusing diodes were introduced.Experimental researches were carried out on FLASH Ⅱ and 2 MV pulsed power drivers.The voltage of RPD is 1.8~2.1 MV,the current is 40~60 kA,the FWHM is 50~60 ns.The X-ray dose at 1 m from the diode in the forward direction was about 20~30 mGy.The spot diameter was about 1 mm,the maximum energy was 1.8 MeV.The preliminary research results for generation and application of high power ion beam(HPIB) on the FLASH Ⅱaccelerator were reported.The structure and principle of pinch reflex ion beam diode were introduced.The HPIB peak current of ~160 kA is obtained with a peak energy of ~500 keV.The experimental investigations of generating 6~7 MeV quasi-monoenergetic pulsed γ-rays with high power ion(proton) beams striking 19F target are presented.In addition,the research results for thermal-mechanical effects on the material irradiated with HPIB applied to simulation X-ray were also discussed.
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