Atomic structure, energetics, dynamics, and manipulation of topological solitons in indium chains on Si(111) surfaces

Hui Zhang,Jin-Ho Choi,Yang Xu,Xiuxia Wang,Xiaofang Zhai,Bing Wang,Changgan Zeng,Jun-Hyung Cho,Zhenyu Zhang,J. G. Hou
2010-01-01
Abstract:Based on scanning tunneling microscopy and first-principles theoretical studies, we characterize the precise atomic structure of a topological soliton in In chains grown on Si(111) surfaces. Variable-temperature measurements of the soliton population allow us to determine the soliton formation energy to be ~60 meV, smaller than one half of the band gap of ~200 meV. Once created, these solitons have very low mobility, even though the activation energy is only about 20 meV; the sluggish nature is attributed to the exceptionally low attempt frequency for soliton migration. We further demonstrate local electric field enhanced soliton dynamics, and the feasibility of aggregating solitons into soliton polymers.
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