Fabrication and Optical-Electrical Properties of P-Type Manganese-Doped Titanium Dioxide Nano-Films
W. Hubei,Yun Gao,X. Xia,Pei Liu
Abstract:Manganese, as a 3d transition metal element, is considered to be one of the potential dopants for TiO2 to adjust the optical-electrical properties of TiO2, aiming to improve the utilization of sunlight, conductivity and carrier mobility of TiO2. The modified TiO2 could then be widely used in the intelligent photo-catalytic, semiconductor sensors, solar cells, etc. In this paper, we have prepared p-type Manganese-doped TiO2 rutile nano-film on amorphous silica/quartz substrates by radio frequency magnetron sputtering method with a Mn0.8Ti1.2O3 solid ceramic target. XRD, EDS, AFM, XPS, UV-Vis-IR, Two-Probe and Hall effect measurements were used to investigate the influences of Mn doping on the crystalline structure, surface state, optical and electrical properties of TiO2 nano-film. The results have shown that Mn doping could effectively extend the light absorption region of TiO2 from UV to visible light. The doping ratio was tuned by adjusting the sputtering power, the higher the sputtering power, the bigger ratio Mn was doped into TiO2. Electrical conductivity of the thin films increased with increase of Mn doping ratio. Mn precipitated when the sputtering power for Mn0.8Ti1.2O3 reached 150 W, suggesting that there is incorporation limit for Mn in TiO2 lattice. The P type Mn doped TiO2 could be used in various applications such as solar cell, gas sensors and photosplitting of water.
Physics,Engineering,Materials Science