Evidence for Field Emission in Electroformed Metal-Insulator-metal Devices

RG Sharpe,RE Palmer
DOI: https://doi.org/10.1016/s0040-6090(96)08804-9
IF: 2.1
1996-01-01
Thin Solid Films
Abstract:Evidence that Fowler-Nordheim field emission contributes significantly to the device current passing through electroformed metal-insulator-metal (MIM) devices at high voltage has been found by recording the low temperature current-voltage characteristics of CuSiOxCu devices. At low voltages (< 10 V) the conduction can be modelled by mechanisms in which, after emission from a given trap, the carriers are captured by the next trap in the filament chain (i.e., either 1-dimensional Poole-Frenkel conduction or tunnelling between adjacent traps). However, at higher voltages (10–15 V), we find evidence of an additional conduction mechanism, Fowler-Nordheim field emission. The onset of this mechanism coincides with the onset of electron emission, most of which occurs at near ballistic energies, indicating that a small fraction of this current is capable of traversing the remainder of the insulator and the top metal layer without significant energy loss.
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