Abstract:: n this paper, investigations of structure and morphology properties of n and p-type porous silicon layer prepared by Photo-electrochemical etching (PECE) and electrochemical etching (ECE) were demonstrated respectively. The atomic force microscopy (AFM), x-ray diffraction (XRD) and optical microscopy investigations showed the influence of the substrate type on the structure, surface roughness and morphology porous silicon layer formation. The density current-voltage (J-V) measurements of Au/PS/n-Si and Au/PS/p-Si heterojunctions showed that they act as double-Schottky-diode behavior. In this work, both the responsivity and quantum efficiency of the porous silicon/c-Si heterojunctions were studied. The quantum efficiency of Au/PS/p-Si HJ was more than 100% comparing with that of Au/PS/n-Si HJ, which to be more than 80% at near ultra violet –visible region. Moreover, effects of the wafer Si substrate type on the responsivity and quantum efficiency of Au/PS/c-Si HJs were discussed and analyzed. scale p-type Figures (7) and (8) show forward and reverse density current–voltage characteristics of Au/PS/n-Si and Au/PS/p-Si heterojunctions measured under dark and illumination with different light power densities. The photocurrent is measured for light power densities of 0.9–9 W/cm 2 . The equation, which describes the current as a function of the applied voltage of the junction can be expressed as [15]: The current flowing depends on two parts: the one which is flowing from the metal to the semiconductor minus the one which is flowing from the semiconductor to the metal. The current starting at a low voltage corresponds to that of a typical thermionic emission. In linear region, thermionic emission and carrier velocity increases. When light power density is increased, the photocurrent is increases due to generation of electron–hole pairs. No soft breakdown has been noticed in the prepared heterojunction at voltage lees than ∓ 5V in double Schottky device. The maximum photocurrent density at the bias of -9V were (644.2, 1178.2, 1830.2and 2094.2) μA/cm 2 and (480, 1236, 3664and 4444) μA/cm 2 for n and p –type illumination by (0.9, 2, 5 and 9) mW/cm 2 power densities respectively. The results showed reduced resistance with increasing photon energy of the illuminating light for both type samples, likely due to increased generation of electron hole-pairs. It can be seen from figures (7) and (8) that the current value at a given voltage for PS/p-Si HJ under illumination is higher than that the PS/n-Si HJ. This indicates that the light generates carrier-contributing photocurrent due to the production of electron–hole pairs as a result of the light absorption in p-type was better than from n-type Si substrate. The saturation current density, measured from semi log I-V plot,

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