The effects of intrinsic defects on the structural and optical properties of ZnO thin film prepared via a sol-gel method
Fucheng Yu,Tianyun Song,Bolong Wang,Boyu Xu,Haishan Li,Hailong Hu,Ling He,Hongyan Duan,Shu Wang,Xianxi Tang
DOI: https://doi.org/10.1088/2053-1591/ab4394
IF: 2.025
2019-09-25
Materials Research Express
Abstract:The ZnO thin-film was prepared via a sol-gel method, followed by an annealing process in the different atmospheres (O2, Ar and H2, respectively), and the intrinsic defects related structural and optical properties were investigated. An enhancement of the interstitial Zn (Zni) and O vacancy (VO) defect concentrations was achieved for the samples annealed in an Ar and H2 atmospheres, which was identified by the XRD and photoluminescence (PL) measurements. And an improvement of the interstitial O (Oi), Zn vacancy (VZn) and anti-site O (OZn) defect concentrations was observed for the sample annealed in an oxygen-rich condition. Furthermore, some defects-related PL characteristics were also examined, and the clearly identifications were shown as below: Zni (435 nm), VO (457 nm), OZn (500 nm), Oi (562 nm), VZn (655 nm), and the electron transition from the ionized Zni to Oi (620 nm).
materials science, multidisciplinary