Abstract:The geometries, stabilities, and electronic properties of Gen and CuGen (n=2–13) clusters have been systematically investigated by using density-functional approach. According to optimized CuGen geometries, growth patterns of Cu-capped Gen or Cu-substituted Gen+1 clusters for the small- or middle-sized CuGen clusters as well as growth patterns of Cu-concaved Gen or Ge-capped CuGen−1 clusters for the large-sized CuGen clusters are apparently dominant. The average atomic binding energies and fragmentation energies are calculated and discussed; particularly, the relative stabilities of CuGe10 and Ge10 are the strongest among all different sized CuGen and Gen clusters, respectively. These findings are in good agreement with the available experimental results on CoGe10− and Ge10 clusters. Consequently, unlike some transition metal (TM)Si12, the hexagonal prism CuGe12 is only low-lying structure; however, the basketlike structure is located as the lowest-energy structure. Different from some TM-doped silicon clusters, charge always transfers from copper to germanium atoms in all different sized clusters. Furthermore, the calculated highest occupied molecular orbital and lowest unoccupied molecular orbital (HOMO-LUMO) gaps are obviously decreased when Cu is doped into the Gen clusters, together with the decrease of HOMO-LUMO gaps, as the size of clusters increases. Additionally, the contribution of the doped Cu atom to bond properties and polarizabilities of the Gen clusters is also discussed.

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