Nonorthogonal Tight-Binding Study Of The Geometries And Electronic Properties Of Ge-N (N=2-20) Clusters

Sd Li,Jj Zhao,Gh Wang
IF: 3.1
1999-01-01
Chemical Research in Chinese Universities
Abstract:The universal-parameter nonorthogonal tight-binding scheme proposed by Menon and Subbaswamy was used to optimize the geometrical structures, binding energies and electron affinities of small germanium clusters Ge-n(n = 2-20). A complete agreement with available ab initio results from the lowest-energy structures for Ge-2-Ge-6 was obtained and reasonable structures for these clusters were predicted and compared with those of corresponding silicon clusters in the range of n = 7-20. The averaged discrepancy with experiments in binding energies for n = 2-7 is about 6% and the calculated electron affinities agree well with the measured values in the range of n = 2-8 as well.
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