Synthesis, structure, band gap, and electronic structure of CsAgSb4S7

Fu Qiang Huang,James A. Ibers
DOI: https://doi.org/10.1016/j.jssc.2004.10.014
IF: 3.3
2005-01-01
Journal of Solid State Chemistry
Abstract:The compound CsAgSb4S7 has been synthesized by the reaction of the elements in a Cs2S3 flux at 773K. The compound crystallizes in a new structure type with eight formula units in space group C2/c of the monoclinic system in a cell at 153K of dimensions a=26.127(2)Å, b=8.8599(7)Å, c=12.100(1)Å, β=97.650(1)°, and V=2776.0(4)Å3. The structure contains two-dimensional ∞2[AgSb4S7] layers separated by Cs atoms. Each ∞2[AgSb4S7] layer is built from edge-sharing one-dimensional ∞1[AgS3] and ∞1[Sb4S7] chains. Each Ag atom is tetrahedrally coordinated to four S atoms. Each Sb3+ center is pyramidally coordinated to three S atoms to form an SbS3 group. CsAgSb4S7 is insulating with an optical band gap of 2.04eV. Extended Hückel calculations indicate that the band gap in CsAgSb4S7 is dominated by the Sb 5s and S 3p states above and below the Fermi level.
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