Self-assembly of Copper Micro/nanoscale Parallel Wires by Electrodeposition on a Silicon Substrate.

MZ Zhang,GL Zuo,ZC Zong,HY Cheng,Z He,CM Yang,GT Zou

DOI: https://doi.org/10.1002/smll.200500338

IF: 13.3

2006-01-01

Small

Abstract:SmallVolume 2, Issue 6 p. 727-731 Communication Self-Assembly of Copper Micro/Nanoscale Parallel Wires by Electrodeposition on a Silicon Substrate† Mingzhe Zhang Prof., Mingzhe Zhang Prof. [email protected] National Laboratory of Surperhard Materials and Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China, Fax: (+86) 341-5166-089Search for more papers by this authorGuihong Zuo, Guihong Zuo National Laboratory of Surperhard Materials and Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China, Fax: (+86) 341-5166-089Search for more papers by this authorZhaocun Zong Dr., Zhaocun Zong Dr. National Laboratory of Surperhard Materials and Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China, Fax: (+86) 341-5166-089Search for more papers by this authorHaiyong Cheng Dr., Haiyong Cheng Dr. National Laboratory of Surperhard Materials and Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China, Fax: (+86) 341-5166-089Search for more papers by this authorZhi He Prof., Zhi He Prof. National Laboratory of Surperhard Materials and Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China, Fax: (+86) 341-5166-089Search for more papers by this authorCunming Yang, Cunming Yang National Laboratory of Surperhard Materials and Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China, Fax: (+86) 341-5166-089Search for more papers by this authorGuangtian Zou Prof., Guangtian Zou Prof. National Laboratory of Surperhard Materials and Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China, Fax: (+86) 341-5166-089Search for more papers by this author Mingzhe Zhang Prof., Mingzhe Zhang Prof. [email protected] National Laboratory of Surperhard Materials and Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China, Fax: (+86) 341-5166-089Search for more papers by this authorGuihong Zuo, Guihong Zuo National Laboratory of Surperhard Materials and Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China, Fax: (+86) 341-5166-089Search for more papers by this authorZhaocun Zong Dr., Zhaocun Zong Dr. National Laboratory of Surperhard Materials and Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China, Fax: (+86) 341-5166-089Search for more papers by this authorHaiyong Cheng Dr., Haiyong Cheng Dr. National Laboratory of Surperhard Materials and Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China, Fax: (+86) 341-5166-089Search for more papers by this authorZhi He Prof., Zhi He Prof. National Laboratory of Surperhard Materials and Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China, Fax: (+86) 341-5166-089Search for more papers by this authorCunming Yang, Cunming Yang National Laboratory of Surperhard Materials and Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China, Fax: (+86) 341-5166-089Search for more papers by this authorGuangtian Zou Prof., Guangtian Zou Prof. National Laboratory of Surperhard Materials and Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China, Fax: (+86) 341-5166-089Search for more papers by this author First published: 25 April 2006 https://doi.org/10.1002/smll.200500338Citations: 24 † This work was funded by the Ministry of Science and Technology No. 2005CB724404, the International cooperation project of the Ministry of Science and Technology of China No. 2001CB711201, and the Key (Key grant) Project of the Chinese Ministry of Education No. 03057. The authors would like to thank Keh-Jim Dunn for helpful discussion and expert advice. Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Graphical Abstract Arrays of straight copper wires can be deposited onto a silica layer (see image) by controlling the concentration of the CuSO4 electrolyte used. The copper wires are shown to contain nanograins of copper oxide, a consequence of the mechanism of their preparation. Wires with widths varying from 80 to 1200 nm suggest promise for applications in, amongst other realms, magnetic storage devices. References 1M. 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