Synthesis and Photoelectrochemical Properties of Thin Bismuth Molybdates Film with Various Crystal Phases

Xu Zhao,Tongguang Xu,Wenqing Yao,Yongfa Zhu
DOI: https://doi.org/10.1016/j.tsf.2009.02.135
IF: 2.1
2009-01-01
Thin Solid Films
Abstract:Bismuth molybdate films with various phase structures including alpha-Bi2Mo3O12, beta-Bi2Mo2O9, gamma-Bi2MoO6, and gamma'-Bi2MoO6 are fabricated on the indium-tin oxide glass substrates from an amorphous heteronuclear complex via the dip-coating method by appropriate adjustment of the reaction conditions. alpha-Bi2Mo3O12, beta-Bi2Mo2O9, and gamma-Bi2MoO6 film can be obtained at 400 degrees C, 500 degrees C, and 500 degrees C for 1 h, respectively. At 500 degrees C, gamma'-Bi2MoO6 can be obtained for 4 h. Film formation process is proposed based on the experimental results. Thin gamma'-Bi2MoO6 films exhibit high photoresponse under visible light irradiation. incident photon to current conversion efficiency of thin gamma'-Bi2MoO6 film starts to increase near 450 nm. And, it can reach 4.1% at 400 nm. The top of the valence band and bottom of the conduction band are roughly estimated to be -0.71 and 1.69 ev, respectively. In contrast, gamma'-Bi2MoO6 generated weak photocurrent; alpha-Bi2Mo3O12 and beta-Bi2Mo2O9 film has no photoresponse under visible light irradiation. The reason for the difference in the visible light response was discussed. (C) 2009 Published by Elsevier B.V.
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