Abstract:One of the great successes of quantum physics is the description of the long-lived Rydberg states of atoms and ions. The Bohr model is equally applicable to donor impurity atoms in semiconductor physics, where the conduction band corresponds to the vacuum, and the loosely bound electron orbiting a singly charged core has a hydrogen-like spectrum according to the usual Bohr-Sommerfeld formula, shifted to the far-infrared due to the small effective mass and high dielectric constant. Manipulation of Rydberg states in free atoms and ions by single and multi-photon processes has been tremendously productive since the development of pulsed visible laser spectroscopy. The analogous manipulations have not been conducted for donor impurities in silicon. Here we use the FELIX pulsed free electron laser to perform time-domain measurements of the Rydberg state dynamics in phosphorus- and arsenic-doped silicon and we have obtained lifetimes consistent with frequency domain linewidths for isotopically purified silicon. This implies that the dominant decoherence mechanism for excited Rydberg states is lifetime broadening, just as for atoms in ion traps. The experiments are important because they represent the first step towards coherent control and manipulation of atomic-like quantum levels in the most common semiconductor and complement magnetic resonance experiments in the literature, which show extraordinarily long spin lattice relaxation times key to many well-known schemes for quantum computing qubits for the same impurities. Our results, taken together with the magnetic resonance data and progress in precise placement of single impurities, suggest that doped silicon, the basis for modern microelectronics, is also a model ion trap.

Manipulation and Decoherence of Acceptor States in Silicon

Spin-orbit dynamics of single acceptor atoms in silicon

Acceptor-induced bulk dielectric loss in superconducting circuits on silicon

Quantum Computing with Acceptor Spins in Silicon

Single Atom Qubits: Acceptors

Bulk and Sub-Surface Donor Bound Excitons in Silicon under Electric Fields

Silicon as a model ion trap: time domain measurements of donor Rydberg states

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

GHz photon-activated hopping between localized states in a silicon quantum dot

Hyperfine Stark effect of shallow donors in silicon

Silicon in the Quantum Limit: Quantum Computing and Decoherence in Silicon Architectures

Dynamical Decoupling of Electron Spins in Phosphorus-Doped Silicon

Multiple-quantum transitions and charge-induced decoherence of donor nuclear spins in silicon

Shallow donor wavefunctions and donor-pair exchange in silicon: Ab initio theory and floating-phase Heitler-London approach

Gate-sensing coherent charge oscillations in a silicon field-effect transistor

Electronic structure of boron and aluminum $δ$-doped layers in silicon

Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device

Shallow-donor wave functions and donor-pair exchange in silicon: Ab initio theory and floating-phase Heitler-London approach

Millisecond electron spin coherence time for erbium ions in silicon

Measurement of enhanced spin-orbit coupling strength for donor-bound electron spins in silicon