Magnetic Ordering and Distribution of Co in GaN

JS Hong,RQ Wu

DOI: https://doi.org/10.1103/physrevb.68.233306

2003-01-01

Abstract:Using the full potential linearized augmented plane wave method, we have explored the atomic distribution and the magnetic and optical properties of Co atoms in GaN. The Co atoms tend to form local compounds and a ferrimagnetic state.

What problem does this paper attempt to address?

Structural Stability and Magnetism of Γ′-Fe4n and CoFe3N Compounds

X. G. Ma,J. J. Jiang,P. Liang,J. Wang,Q. Ma,Q. K. Zhang

DOI: https://doi.org/10.1016/j.jallcom.2009.01.103

IF: 6.2

2009-01-01

Journal of Alloys and Compounds

Abstract:Total energy and electronic structure calculations for γ′-Fe4N and CoFe3N in the anti-perovskite crystal structure have been performed to understand the structural stability and magnetism using plane-wave pseudopotential method. The virtual crystal approximation (VCA) was used to study order/disorder to examine the effect of the substitution of Co for Fe on the structural stability in CoFe3N alloy. The results show that CoFe3N energetically prefers ordered configuration for Co atoms occupying the corner position. Moreover, the substitution of Co for Fe at corner sites does slightly change the lattice constant, whereas it increases bulk modulus and could hardly changes the ductility. To reveal the role of nitrogen in γ′-Fe4N and CoFe3N, the Mulliken charge and bond population are used as a measure of charge transfers and an analysis of the covalency of these systems, respectively. It turns out that the further distant atoms from the N atom have the larger magnetic moment for γ′-Fe4N and CoFe3N, due to the spin-down electrons transfer from the corner atoms to the face-centered atoms.
Synthesis, Structural and Magnetic Properties of Cobalt-Doped GaN Nanowires on Si by Atmospheric Pressure Chemical Vapor Deposition

Zhe Chuan Feng,Yu-Lun Liu,Jeffrey Yiin,Li-Chyong Chen,Kuei-Hsien Chen,Benjamin Klein,Ian T. Ferguson

DOI: https://doi.org/10.3390/ma16010097

IF: 3.4

2022-12-23

Materials

Abstract:GaN nanowires (NWs) grown on silicon via atmospheric pressure chemical vapor deposition were doped with Cobalt (Co) by ion implantation, with a high dose concentration of 4 × 1016 cm−2, corresponding to an average atomic percentage of ~3.85%, and annealed after the implantation. Co-doped GaN showed optimum structural properties when annealed at 700 °C for 6 min in NH3 ambience. From scanning electron microscopy, X-ray diffraction, high resolution transmission electron microscope, and energy dispersive X-ray spectroscopy measurements and analyses, the single crystalline nature of Co-GaN NWs was identified. Slight expansion in the lattice constant of Co-GaN NWs due to the implantation-induced stress effect was observed, which was recovered by thermal annealing. Co-GaN NWs exhibited ferromagnetism as per the superconducting quantum interference device (SQUID) measurement. Hysteretic curves with Hc (coercivity) of 502.5 Oe at 5 K and 201.3 Oe at 300 K were obtained. Applied with a magnetic field of 100 Oe, the transition point between paramagnetic property and ferromagnetic property was determined at 332 K. Interesting structural and conducive magnetic properties show the potential of Co-doped GaN nanowires for the next optoelectronic, electronic, spintronic, sensing, optical, and related applications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Accurate Characterization of Room-Temperature Long Range Magnetic Order in GaN: Mn by Magnetic Force Microscope

YuHao Zhang,ZhiYuan Lin,ZhiTao Chen,YuZhou Qian,XueLin Yang,Ding Li,FaFa Zhang,Tao Dai,BaoShan Han,CunDa Wang,GuoYi Zhang

DOI: https://doi.org/10.1007/s11431-010-4191-1

2010-01-01

Abstract:Room-temperature ferromagnetism with a Curie temperature higher than 380 K was studied in GaN: Mn thin films grown by metal-organic chemical vapor deposition. By etching artificial microstructures on the GaN: Mn layer, strong magnetic responses were observed in the magnetic force microscopy (MFM) measurement, which revealed that the films were independent of dopant particles and clusters. Numerical simulation on the data of atomic force microscope (AFM) and MFM measurements covering the whole microstructure validated the formation of long range magnetic order. This result excluded a variety of controversial origins of room-temperature ferromagnetism in the GaN: Mn and gave a strong evidence of our GaN: Mn as the intrinsic diluted magnetic semiconductor (DMS). The forwarded method for accurate characterization of long range magnetic order could be applied to a wide range of DMS and diluted magnetic oxide (DMO) systems.
In-Plane Magnetic Anisotropy of Bcc Co on Gaas(001)

YZ Wu,HF Ding,C Jing,D Wu,GL Liu,V Gordon,GS Dong,XF Jin,S Zhu,K Sun

DOI: https://doi.org/10.1103/physrevb.57.11935

IF: 3.7

1998-01-01

Physical Review B

Abstract:Epitaxial growth of Co on GaAs(001) and its in-plane magnetic anisotropy are studied using reflection high-energy electron diffraction, a high-resolution transmission electron microscope, and the magneto-optical Kerr effect. In the initial and final stages of growth, Co exists in single-crystalline body-centered-cubic (bcc) and hexagonal-closed-packed (hcp) phases, respectively, while in the middle stage the coexistence of the bcc and hcp structures is observed. For the bcc Co thin films on GaAs(001), a fourfold in-plane magnetic anisotropy with easy axes along the [100] directions is realized and discussed. [S0163-1829(98)04915-7].
Epitaxy and magnetism of Co on GaAs(0 0 1)

Y.Z Wu,H.F Ding,C Jing,D Wu,G.S Dong,X.F Jin,K Sun,S Zhu

DOI: https://doi.org/10.1016/S0304-8853(98)01112-3

IF: 3.097

1999-01-01

Journal of Magnetism and Magnetic Materials

Abstract:Epitaxial structure of Co on GaAs(001) is studied by cross section high resolution transmission electron microscope. A bilayer structure is confirmed in the Co thin-film, where a body-centered-cubic (BCC) phase near the interface and a two-domain hexagonal-close-packed (HCP) phase on the top. Using the magneto-optical Kerr effect (MOKE) measurement, the in-plane magnetic anisotropy of the BCC phase is determined as a fourfold symmetry with easy axes along the 〈100〉 directions. Strongly depending on the growth temperature, the two-domain HCP phase shows either a uniaxial symmetry along the 〈110〉 direction or a fourfold symmetry with easy axes along the 〈100〉 directions.
A solid-state NMR and DFT study of compositional modulations in Al x Ga

Paulus J. Knijn,P. Jan M. van Bentum,Ernst R. H. van Eck,Changming Fang,Dennis L. A. G. Grimminck,Robert A. de Groot,Remco W. A. Havenith,Martijn Marsman,W. Leo Meerts,Gilles A. de Wijs,Arno P. M. Kentgens

2010-01-01

Abstract:We have conducted As and Ga Nuclear Magnetic Resonance (NMR) experiments to investigate order/disorder in AlxGa1 xAs lift-off films with x B 0.297 and 0.489. We were able to identify all possible As(AlnGa4 n) sites with n = 0–4 coordinations in As NMR spectra using spin-echo experiments at 18.8 Tesla. This was achieved by employing high rf field strengths using a small solenoid coil and an NMR probe specifically designed for this purpose. Spectral deconvolution, using an evolutionary algorithm, complies with the absence of long-range order if a CuAu based order parameter is imposed. An unconstrained fit shows a deviation of the statistics imposed by this type of ordering. The occupational disorder in the Ga and Al positions is reflected in a distribution of the Electric Field Gradients (EFGs) experienced at the different arsenic sites. We established that this can be modelled by summing the effects of the first coordination sphere and a Czjzek type distribution resulting from the compositional variation in the Al/Ga sub-lattice in the higher coordination spheres. Ga 3QMAS and nutation data exclude the presence of highly symmetric sites and also show a distribution in EFG. The experimentally obtained quadrupolar interactions are in good agreement with calculations based on Density Functional Theory (DFT). Using additivity of EFG tensors arising from distant charge perturbations, we could use DFT to model the EFG distributions of the n = 0–4 sites, reproducing the Czjzek and extended Czjzek distributions that were found experimentally. On the basis of these calculations we conclude that the As quadrupolar interaction is sensitive to compositional modulations up to the 7th coordination shell in these systems.
Studies on Structural and Magnetic Properties in Mn-Doped GaN

Cui Xugao,Zhang Rong,Tao Zhikuo,Li Xin,Xiu Xiangqian,Xie Zili

2008-01-01

Abstract:Mn-doped GaN epitaxial films(Ga1-xMnxN)were grown on sapphire [0001] by metal organic chemical vapor deposition(MOCVD).Mn concentration was determined by energy dispersive spectrometry(EDS).For Ga1-xMnxN with x up to 0.027,no secondary phases except for GaN were detected by high resolution X-ray diffractometer(XRD).Raman scattering spectra shows that the longitudinal optical phonon mode A1(LO)of Ga1-xMnxN shifts towards lower frequency with increasing Mn concentration due to substitutional Mn incorporation.Room temperature electron spin resonance(ESR)measurements are performed and highly anisotropic six-fold hyperfine line indicates that the ionized Mn2+ substitutes for Ga3+ ions.However,superconductor quantum interference device(SQUID)magnetometry reveals that all homogenous Mn-doped GaN films show paramagnetic-like behaviors.From Brillouin function fit and ESR spectra,it is concluded that Mn ions are present as isolated paramagnetic centers.
Structural and Magnetic properties of Ge0.5Mn0.5Co2O4 using neutron diffraction

Pooja Jain,Benny Schundelmier,Chin-Wei Wang,Poonam Yadav,Kaya Wei,N. P. Lalla,Shivani Sharma

2024-07-01

Abstract:The structural and magnetic properties of Ge0.5Mn0.5Co2O4 (GMCO) have been investigated in detail utilizing neutron powder diffraction (NPD), x-ray diffraction (XRD), DC magnetometry, and heat capacity analysis and compared with GeCo2O4. Despite both compounds exhibiting a cubic structure at room temperature, a substantial difference on low temperature structural properties have been observed for GMCO, indicating the effect of Mn substitution on crystal structure. The magnetic and heat capacity data reveal a ferrimagnetic ordering around 108 K in GMCO. A minor secondary phase is confirmed which undergoes long range AFM ordering at further lower temperatures. This secondary phase remains undetected in XRD due to identical lattice parameters. Furthermore, the analysis of heat capacity data indicates a broadening of the high-temperature transition, attributing to the short-range correlation persisting up to higher temperatures. The estimated magnetic entropy amounts is 63% of the value expected for GMCO. The missing entropy is likely linked with the short-range magnetic correlations persisting well above the transition temperature. Cation distribution at the A and B sites has been estimated in GMCO using NPD. Magnetic structures are also confirmed in the main phase as well as in the secondary phase using NPD analysis. The high-temperature transition corresponds to the ferrimagnetic ordering of A and B site cations in the main phase. A collinear ferrimagnetic arrangement of A and B site spins aligned parallel to c axis is observed. The average values of A and B site moments in the ferrimagnetic phase at 5 K are 2.31(3) and 1.82(3)mB, respectively, with the temperature dependence of moments following the expected power law behavior. The low-temperature ordering is attributed to the antiferromagnetic ordering of B site ions associated with the secondary phase, something similar to GeCo2O4.

Strongly Correlated Electrons
Magnetic Ordering and X-Ray Magnetic Circular Dichroism of Co Doped ZnO

Jisang Hong,Ruqian Wu

DOI: https://doi.org/10.1063/1.1857052

IF: 2.877

2005-01-01

Journal of Applied Physics

Abstract:Using the full potential linearized augmented plane wave method, we explored the magnetization and magnetic ordering of Co doped ZnO. Energetically Co prefers nonuniform distribution and antiferromagnetic ordering. Both Zn and O display measurable x-ray magnetic circular dichroism spectra.
Ferromagnetism in Mn-doped GaN Nanowires.

Q Wang,Q Sun,P Jena

DOI: https://doi.org/10.1103/physrevlett.95.167202

IF: 8.6

2005-01-01

Physical Review Letters

Abstract:Using density functional theory we show that the magnetic coupling of Mn atoms in the nanowires, unlike that in the thin film, is ferromagnetic. This ferromagnetic coupling, brought about due to the confinement of electrons in the radial direction and the curvature of the Mn-doped GaN nanowires' surface, is mediated by N as is evidenced from the overlap between Mn 3d and N 2p states. Calculations of the anisotropic energy further show that the magnetic moment orients preferably along the [1010] direction while the wire axis points along the [0001] direction.
Ab initio study of electronic and magnetic properties of the C-codoped Ga 1 − x Mn x N ( 10 1 ¯ 0 ) surface

Qian Wang,Qiang Sun,Puru Jena

DOI: https://doi.org/10.1103/physrevb.75.035322

IF: 3.7

2007-01-01

Physical Review B

Abstract:First principles calculations based on gradient corrected density functional theory have been carried out to study the magnetic coupling between Mn atoms in pure and carbon doped ${\\mathrm{Ga}}_{1\\ensuremath{-}x}{\\mathrm{Mn}}_{x}\\mathrm{N}$ thin films. We show that the ground state of Mn-doped GaN $(10\\overline{1}0)$ thin film, with Mn replacing the Ga sites, is antiferromagnetic but becomes ferromagnetic when it is codoped with C. The interaction between the Mn spins via the delocalized holes introduced by codoping of C at N sites is responsible for this transition. The overlap between Mn $3d$ and C $2p$ in the spin-up band renders half-metallic character to the C codoped (Ga,Mn)N system. The observed ferromagnetism in (Ga,Mn)N thin films is believed to be associated with defects or codoping with other elements during the film growth. The present study provides the theoretical understanding for many recent experiments on the Mn-doped GaN system.
Magnetic dichroism study on Mn$_{1.8}$Co$_{1.2}$Ga thin film using a combination of X-ray absorption and photoemission spectroscopy

Siham Ouardi,Gerhard H. Fecher,Takahide Kubota,Shigemi Mizukami,Eiji Ikenaga,Tetsuya Nakamura,Claudia Felser

DOI: https://doi.org/10.1088/0022-3727/48/16/164007

2015-01-16

Abstract:Using circularly polarised radiation and a combination of bulk-sensitive hard X-ray photoelectron spectroscopy and X-ray-absorption spectroscopy (XAS) we studied the electronic and magnetic structure of epitaxial Mn$_{1.8}$Co$_{1.2}$Ga thin films. Spin resolved Bloch spectral functions, density of states as well as charge and magnetisation densities were investigated by a first-principles analysis of full potential, fully relativistic Korringa--Kohn--Rostoker calculations of the electronic structure. The valence states were experimentally investigated by using linear dichroism in the angular distribution and comparing the results to spin-resolved densities of states. The linear dichroism in the valence band enabled a symmetry analysis of the contributing states. The spectra were in good agreement with the theoretical partial density of states. The element-specific, spin-resolved, unoccupied densities of states for Co and Mn were analysed by using XAS and X-ray magnetic circular dichroism (XMCD) at the $L_{3,2}$ edges. The spectra were influenced by strong correlation effects. XMCD was used to extract the site resolved magnetic moments. The experimental values of $m_{\rm Mn}=0.7\:\mu_B$ and $m_{\rm Co}=1.05\:\mu_B$ agree very well with the calculated magnetic moments. Magnetic circular dichroism in angle-resolved photoelectron spectroscopy at the Mn and Co $2p$ core level exhibited a pronounced magnetic dichroism and confirmed the localised character of the Mn $d$ valence states.

Materials Science
Microscopic Structure of Al_(0.15)In_(0.01)Ga_(0.84)N/In_(0.2)Ga_(0.8)N and In_(0.2)Ga_(0.8)N/GaN of GaN-based Quantum-well

Hu Xiaodong

2008-01-01

Abstract:GaN-based quantum wells are the core structure of optoelectronic devices such as light-emitting diodes,laser diodes.Our experiments show that,In0.2Ga0.8N/GaN ternary alloys quantum wells and Al0.15In0.01Ga0.84N/In0.2Ga0.8N quaternary alloy quantum wells,two different quantum well structures for laser diode,have significant differences about the electrical properties and luminous efficiency.In this paper,we study on microscopic characteristics of these two different quantum well structure.Through high-resolution X-ray diffraction,we got the satellite peaks of these two different alloys quantum wells by ω/2θ scanning.Using X-ray diffraction,we got the rocking curves by ω scanning of two kinds of MQW's symmetry face(002) and asymmetric face(101),(102),(103),(104),(105) and(201).Through atomic force microscope,photoluminescence spectra and high resolution X-ray diffraction,it revealed the different nature of the macro factors of the In0.2Ga0.8N/GaN ternary alloys and Al0.15In0.01Ga0.84N/In0.2Ga0.8N quaternary alloys.
Clustering of Cr in GaN Nanotubes and the Onset of Ferrimagnetic Order

Q. Wang,Q. Sun,P. Jena,Y. Kawazoe

DOI: https://doi.org/10.1103/physrevb.73.205320

IF: 3.7

2006-01-01

Physical Review B

Abstract:A comprehensive theoretical study of the structure and magnetic properties of Cr-doped GaN nanotubes yields some interesting and unexpected results: (1) A single wall GaN nanotube constructed from the GaN wurtzite crystal relaxes to a carbon-like zigzag SWNT structure and remains stable at $300\phantom{\rule{0.3em}{0ex}}\mathrm{K}$, while a multiwall GaN nanotube retains its original wurtzite form. (2) Cr atoms prefer to form clusters and the underlying magnetism depends on the degree of clustering. (3) The coupling between two Cr atoms mediated by the neighboring N is ferromagnetic, but changes to ferrimagnetic as the cluster grows. These results are based on spin polarized density functional theory with exchange and correlation potential approximated by both the generalized gradient approximation and the local spin density approximation $+U$ methods.
Microscopic structure of Al0.15 In0.01 Ga0.84 N/In0.2 Ga0.8 N and In0.2 Ga0.8 N/GaN of GaN-based quantum-well

Hui Liao,Weihua Chen,Ding Li,Rui Li,Quanjie Jia,Zhijian Yang,Guoyi Zhang,Xiaodong Hu

2008-01-01

Chinese Journal of Luminescence

Abstract:GaN-based quantum wells are the core structure of optoelectronic devices such as light-emitting diodes, laser diodes. Our experiments show that, In0.2 Ga0.8 N/GaN ternary alloys quantum, wells and Al0.15 In0.01 Ga0.84 N/ In0.2 Ga0.8N quaternary alloy quantum wells, two different quantum well structures for laser diode, have significant differences about the electrical properties and luminous efficiency. In this paper, we study on microscopic characteristics of these two different quantum well stiucture. Through high-resolution X-ray diffraction, we got the satellite peaks of these two different alloys quantum wells by ω/2θ scanning. Using X-ray diflraction, we got the rocking curves by ω scanning of two kinds of MQW's symmetry face (002) and asymnletric face (101), (102), (103), (104), (105) and (201). Through atomic force microscope, photoluminescence spectra and high resolution X-ray diffraction, it revealed the different nature of thp macro factors of the In0.2 Ga0.8 N/GaN ternary alloys and Al0.15 In0.01 Ga0.84 N/In0.2 Ga0.8N quaternary alloys.
Unravelling the Local Crystallographic Structure of Ferromagnetic Ga$_y$Fe$_{4-y}$N Nanocrystals Embedded in GaN

A. Navarro-Quezada,K. Gas,A. Spindlberger,F. Karimi,M. Sawicki,G. Ciatto,A. Bonanni

DOI: https://doi.org/10.48550/arXiv.2011.01699

2020-11-03

Abstract:In the Fe-doped GaN phase-separated magnetic semiconductor GaFeN, the presence of embedded Ga$_y$Fe$_{4-y}$N nanocrystals determines the magnetic properties of the system. Here, through a combination of anomalous x-ray diffraction and diffraction anomalous fine structure, the local structure of Ga in self-assembled face-centered cubic (fcc) Ga$_y$Fe$_{4-y}$N nanocrystals embedded in wurtzite GaN thin layers is investigated in order to shed light onto the correlation between fabrication parameters, local structural arrangement and overall magnetic properties of the material system. It is found, that by adjusting the growth parameters and thus, the crystallographic surroundings, the Ga atoms can be induced to incorporate into 3$c$ positions at the faces of the fcc crystal lattice, reaching a maximum occupancy of 30\%. The magnetic response of the embedded nanocrystals is ferromagnetic with Curie temperature increasing from 450\,K to 500\,K with the Ga occupation. These results demonstrate the outstanding potential of the employed experimental protocol for unravelling the local structure of magnetic multi-phase systems, even when embedded in a matrix containing the same element under investigation.

Materials Science
Role of Nitrogen Split Interstitial Defects in the Magnetic Properties of Cu-doped GaN

Y. Liu,Z. Gai,M. Weinert,L. Li

DOI: https://doi.org/10.1103/physrevb.85.075207

IF: 3.7

2012-01-01

Physical Review B

Abstract:Cu-doped GaN thin films are grown by plasma-assisted molecular beam epitaxy. With nitrogen plasma only, films phase segregate into GaN and Cu-rich alloys. In contrast, when nitrogen-hydrogen plasma is used, the films are single-phased Ga(1-)xCu(x)N, with x as high as 0.04. Contrary to earlier studies, however, these films are not ferromagnetic, but rather paramagnetic in nature. First-principles calculations indicate that although each substitutional Cu-Ga exhibits a moment of 1 mu(B)/Cu, it can be suppressed by neighboring intrinsic defects such as N split interstitials.
Jahn-Teller driven quadrupolar ordering and spin-orbital dimer formation in GaNb$_{4}$Se$_{8}$

Tsung-Han Yang,Tieyan Chang,Yu-Sheng Chen,K. W. Plumb

DOI: https://doi.org/10.1103/PhysRevB.109.144101

2024-01-10

Abstract:The lacunar spinel GaNb$_4$Se$_8$ is a tetrahedral cluster Mott insulator where spin-orbit coupling on molecular orbitals and Jahn-Teller energy scales are competitive. GaNb$_4$Se$_8$ undergoes a structural and anti-polar ordering transition at T$_Q$ = 50 K that corresponds to a quadrupolar ordering of molecular orbitals on Nb$_4$ clusters. A second transition occurs at T$_M$ = 29 K, where local distortions on the Nb$_4$ clusters rearrange. We present a single crystal x-ray diffraction investigation these phase transitions and solve the crystal structure in the intermediate T$_M$ < T < T$_Q$ and low T < T$_M$ temperature phases. The intermediate phase is a primitive cubic P2$_1$3 structure with a staggered arrangement of Nb4 cluster distortions. A symmetry mode analysis reveals that the transition at TQ is continuous and described by a single Jahn-Teller active amplitude mode. In the low temperature phase, the symmetry of Nb$_4$ clusters is further reduced and the unit cell doubles into an orthorhombic P2$_1$2$_1$2$_1$ space group. Nb$_4$ clusters rearrange through this transition to form a staggered arrangement of intercluster dimers, suggesting a valence bond solid magnetic state.

Strongly Correlated Electrons,Materials Science
Structural and Magnetic Properties of Co+ Implanted N-Gan Dilute Magnetic Semiconductors

G. Husnain,Fa Tao,Yao Shu-De

DOI: https://doi.org/10.1016/j.physb.2010.02.044

IF: 2.988

2010-01-01

Physica B Condensed Matter

Abstract:The n-type GaN epilayer was grown on sapphire prepared by metal organic chemical vapour deposition and subsequently Co+ ions implanted. The properties of Co+ ions implanted GaN epilayer were investigated by structural and magnetic measurements. The results of Rutherford backscattering spectrometry and channeling illustrate that an excellent crystalline quality (χmin=1.3%) of as-grown GaN. After the implantation of 150keV Co+ ions with dose 3×1016cm−2 into GaN and subsequently annealed at 700, 800 and 900°C, no secondary phase or metal related-peaks were detected by typical XRD. In addition high-resolution X-ray diffraction (HRXRD) was performed to study structural related properties. The magnetization curves were obtained by SQUID and AGM measurements, a well-defined hysteresis loop was observed even at 300K. The temperature dependence of magnetization was taken in FC and ZFC conditions showed the highest Curie temperature (TC) ∼370K recorded for Co+ implanted GaN.
Microscopic Structure of Al0.15In0.01Ga0.84N/In0.2Ga0.8N and In0.2Ga0.8N/GaN of GaN-based Quantum-well

Hui LIAO,Wei-hua CHEN,Ding LI,Rui LI,Quan-jie JIA,Zhi-jian YANG,Guo-yi ZHANG,Xiao-dong HU

2008-01-01

Chinese Journal of Luminescence

Abstract:GaN-based quantum wells are the core structure of optoelectronic devices such as light-emitting diodes,laser diodes. Our experiments show that,In0.2Ga0.8N/GaN ternary alloys quantum wells and Al0.15In0.01Ga0.84N/In0.2Ga0.8N quaternary alloy quantum wells,two different quantum well structures for laser diode,have significant differences about the electrical properties and luminous efficiency. In this paper,we study on microscopic characteristics of these two different quantum well structure. Through high-resolution X-ray diffraction,we got the satellite peaks of these two different alloys quantum wells by ω/2θ scanning. Using X-ray diffraction,we got the rocking curves by ω scanning of two kinds of MQWs symmetry face (002) and asymmetric face (101),(102),(103),(104),(105) and (201). Through atomic force microscope,photoluminescence spectra and high resolution X-ray diffraction,it revealed the different nature of the macro factors of the In0.2Ga0.8N/GaN ternary alloys and Al0.15In0.01Ga0.84N/In0.2Ga0.8N quaternary alloys.

Magnetic Ordering and Distribution of Co in GaN

Structural Stability and Magnetism of Γ′-Fe4n and CoFe3N Compounds

Synthesis, Structural and Magnetic Properties of Cobalt-Doped GaN Nanowires on Si by Atmospheric Pressure Chemical Vapor Deposition

Accurate Characterization of Room-Temperature Long Range Magnetic Order in GaN: Mn by Magnetic Force Microscope

In-Plane Magnetic Anisotropy of Bcc Co on Gaas(001)

Epitaxy and magnetism of Co on GaAs(0 0 1)

A solid-state NMR and DFT study of compositional modulations in Al x Ga

Studies on Structural and Magnetic Properties in Mn-Doped GaN

Structural and Magnetic properties of Ge0.5Mn0.5Co2O4 using neutron diffraction

Magnetic Ordering and X-Ray Magnetic Circular Dichroism of Co Doped ZnO

Ferromagnetism in Mn-doped GaN Nanowires.

Ab initio study of electronic and magnetic properties of the C-codoped Ga 1 − x Mn x N ( 10 1 ¯ 0 ) surface

Magnetic dichroism study on Mn$_{1.8}$Co$_{1.2}$Ga thin film using a combination of X-ray absorption and photoemission spectroscopy

Microscopic Structure of Al_(0.15)In_(0.01)Ga_(0.84)N/In_(0.2)Ga_(0.8)N and In_(0.2)Ga_(0.8)N/GaN of GaN-based Quantum-well

Clustering of Cr in GaN Nanotubes and the Onset of Ferrimagnetic Order

Microscopic structure of Al0.15 In0.01 Ga0.84 N/In0.2 Ga0.8 N and In0.2 Ga0.8 N/GaN of GaN-based quantum-well

Unravelling the Local Crystallographic Structure of Ferromagnetic Ga$_y$Fe$_{4-y}$N Nanocrystals Embedded in GaN

Role of Nitrogen Split Interstitial Defects in the Magnetic Properties of Cu-doped GaN

Jahn-Teller driven quadrupolar ordering and spin-orbital dimer formation in GaNb$_{4}$Se$_{8}$

Structural and Magnetic Properties of Co+ Implanted N-Gan Dilute Magnetic Semiconductors

Microscopic Structure of Al0.15In0.01Ga0.84N/In0.2Ga0.8N and In0.2Ga0.8N/GaN of GaN-based Quantum-well