Abstract:Group-III nitrides have transformed solid-state lighting and are strategically positioned to revolutionize high-power and high-frequency electronics. To drive this development forward, a deep understanding of fundamental material properties, such as charge carrier behavior, is essential and can also unveil new and unforeseen applications. This underscores the necessity for novel characterization tools to study group-III nitride materials and devices. The optical Hall effect (OHE) emerges as a contactless method for exploring the transport and electronic properties of semiconductor materials, simultaneously offering insights into their dielectric function. This non-destructive technique employs spectroscopic ellipsometry at long wavelengths in the presence of a magnetic field and provides quantitative information on the charge carrier density, sign, mobility, and effective mass of individual layers in multilayer structures and bulk materials. In this paper, we explore the use of terahertz (THz) OHE to study the charge carrier properties in group-III nitride heterostructures and bulk material. Examples include graded AlGaN channel high-electron-mobility transistor (HEMT) structures for high-linearity devices, highlighting the different grading profiles and their impact on the two-dimensional electron gas (2DEG) properties. Next, we demonstrate the sensitivity of the THz OHE to distinguish the 2DEG anisotropic mobility parameters in N-polar GaN/AlGaN HEMTs and show that this anisotropy is induced by the step-like surface morphology. Finally, we present the temperature-dependent results on the charge carrier properties of 2DEG and bulk electrons in GaN with a focus on the effective mass parameter and review the effective mass parameters reported in the literature. These studies showcase the capabilities of the THz OHE for advancing the understanding and development of group-III materials and devices.

Ultrafast Third-Harmonic Generation from Textured Aluminum Nitride–sapphire Interfaces

Effects of Thickness and Grain Size on Harmonic Generation in Thin AlN Films

Reflective second harmonic generation near resonance in the epitaxial Al-doped ZnO thin film.

Anisotropic ultrafast electron dynamics induced by high-field terahertz pulses in n-doped InGaAs

Second Harmonic Generation from Phononic Epsilon-Near-Zero Berreman Modes in Ultrathin Polar Crystal Films

Measurement and In-Depth Analysis of Higher Harmonic Generation in Aluminum Alloys with Consideration of Source Nonlinearity

Effect of structural parameters and applied external fields on the third harmonic generation coefficient of AlGaAs/GaAs three-step quantum well

Third harmonic generation in Dirac semimetal Cd 3 As 2

Sum-Frequency Generation Spectro-Microscopy in the Reststrahlen Band of Wurtzite-type Aluminum Nitride

Absorption Spectra of AlGaN/GaN Terahertz Plasmonic Crystals-Experimental Validation of Analytical Approach

Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect

Local thermal conductivity of polycrystalline AlN ceramics measured by scanning thermal microscopy and complementary scanning electron microscopy techniques

Thermal Conductance Across Harmonic-matched Epitaxial Al-sapphire Heterointerfaces

Measurement and Modeling of ErAs:In0.53Ga0.47As Nanocomposite Photoconductivity for THz Generation at 1.55 Μm Pump Wavelength

Third-Harmonic Generation by Use of Focused Gaussian Beams in an Optical Superlattice

Nonperturbative Nonlinear Metasurfaces for Efficient Terahertz Harmonic Generation

Growth-microstructure-thermal property relations in AlN thin films

Phase-matched third-harmonic generation in silicon nitride waveguides

Third harmonic generation of a 12–6 GaAs/Ga Al As double quantum well: effect of external fields

Wavelength Dependent Nonlinear Spectroscopic Study of Third Harmonic Generation Probed by Rotational Maker Fringes Method

Highly-efficient third-harmonic generation from ultrapure diamond crystals