Effects of Li Impurities on Mgo(001)

ZX Yang,G Liu,RQ Wu
DOI: https://doi.org/10.1103/physrevb.65.235432
2002-01-01
Abstract:The electronic properties of Li-doped MgO(001) surfaces with and without O vacancies are investigated using density-functional theory within the full-potential linearized-augmented plane-wave approach. The calculated formation energy of an O vacancy on the Li-doped MgO(001) surface is drastically reduced to 6.55 eV from that on the MgO(001) clean surface (9.5 eV). This explains the experimental observation that Li impurity promotes the production of O vacancies. The Li-doped O-deficient MgO(001) surface is rich in gap states around the Fermi level, which should strongly enhance its chemical activity.
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