Abstract:We present a detailed numerical study of the electronic transport properties of bilayer and trilayer graphene within a framework of single-electron tight-binding model. Various types of disorder are considered, such as resonant (hydrogen) impurities, vacancies, short-or long-range Gaussian random potentials, and Gaussian random nearest-neighbor hopping. The algorithms are based on the numerical solution of the time-dependent Schrodinger equation and applied to calculate the density of states and conductivities (via the Kubo formula) of large samples containing millions of atoms. In the cases under consideration, far enough from the neutrality point, depending on the strength of disorders and the stacking sequence, a linear or sublinear electron-density-dependent conductivity is found. The minimum conductivity sigma(min) approximate to 2e(2)/h (per layer) at the charge neutrality point is the same for bilayer and trilayer graphene, independent of the type of the impurities, but the plateau of minimum conductivity around the neutrality point is only observed in the presence of resonant impurities or vacancies, originating from the formation of the impurity band.

Electronic Structure In Gapped Graphene With A Coulomb Potential

Non-equilibrium Phase Transition of the Fully Frustrated Square Lattice Coulomb Gas Model

Modeling Electronic Structure and Transport Properties of Graphene with Resonant Scattering Centers

Energy-gap Opening and Quenching in Graphene under Periodic External Potentials

Modeling Klein Tunneling and Caustics of Electron Waves in Graphene

Electronic and Optical Properties of Graphene Quantum Dots: the Role of Many-Body Effects

Electron Transport Through A Double-Quantum-Dot Structure with Intradot and Interdot Coulomb Interactions

Electronic Transport in Disordered Bilayer and Trilayer Graphene

Anomalous Induced Density of Supercritical Coulomb Impurities in Graphene Under Strong Magnetic Fields

Coulomb impurity under magnetic field in graphene: a semiclassical approach

Evolution with Magnetic Field of Discrete Scale Invariant Supercritical States in Graphene

Gate-induced Gap in Bilayer Graphene Suppressed by Coulomb Repulsion

Theory of charged impurity scattering in two dimensional graphene

Tunneling States In Graphene Heterostructures Consisting Of Two Different Graphene Superlattices

Charged vacancy in graphene: interplay between Landau levels and atomic collapse resonances

Electron dynamics in graphene with gate-defined quantum dots

Electronic structure and transport in graphene: quasi-relativistic Dirac--Hartry--Fock self-consistent field approximation

Electron Scattering in Gapped Graphene Quantum Dots

Electronic Transport In Asymmetric Graphene Superlattice With Internal Potential Well

Transport and Conductance in Fibonacci Graphene Superlattices with Electric and Magnetic Potentials

Electronic Band Gaps and Transport Properties in Graphene Superlattices with One-Dimensional Periodic Potentials of Square Barriers