Design and Fabrication of High Sensitivity AlGaN/GaN HEMT Biosensors

Xue Wei,Li Jiadong,Xie Jie,Wu Dongmin
DOI: https://doi.org/10.3969/j.issn.1671-4776.2012.07.001
2012-01-01
Abstract:Currently,the surface modification and molecular recognition component fixation of AlGaN/GaN high-electron-mobility transistor(HEMT) biosensors should be carried out on the metal or oxide gate electrodes.In order to solve the problems including the increase of fabrication difficulty and production cost,and the reduction of the sensitivity of the sensor due to the exis-tence of metal or oxide gate electrodes,the biomolecule-gate was studied,the surface of sensors was modified by APTES as the substrate of the molecular recognition component fixation.The method reduces the production cost and improves the sensitivity of the sensor at the same time.When the goat IgG with the mass concentration of 0.1 ng/mL was tested by the sensor with the region of L=5 μm and W=160 μm,the drain-source current decreased about 30 μA.The sensor has high response speed,is suitable for the real-time monitoring,and has a good application prospect in the fields of the environment monitoring and medicine.
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