Modification of the Electrodes of Organic Light-Emitting Devices Using the Sno2 Ultrathin Layer

WF Xie,LT Zhang,SY Liu
DOI: https://doi.org/10.1088/0268-1242/19/3/014
IF: 2.048
2004-01-01
Semiconductor Science and Technology
Abstract:SnO2 ultrathin layers were inserted between organic/Al and organic/indium tin oxide (ITO) interface in the organic double layer devices based on N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB) and tris(8-hydroxyquinoline) aluminium (Alq3), respectively. In the presence of the SnO2 at the Alq3/Al interface, the maximum efficiency and luminance of the device are 0.841 lm W−1 and 4733 cd m−2 while those of the device without the layer are 0.214 lm W−1 and 1644 cd m−2. In the devices with a LiF/Al cathode, the maximum efficiency and luminance of the device with the SnO2 at the ITO/NPB interface are 1.63 lm W−1 and 18 280 cd m−2 while those of the device without the layer are 1.03 lm W−1 and 13 540 cd m−2.
What problem does this paper attempt to address?