Channeling and resonant backscattering investigations of Co doped diluted magnetic oxide films prepared by pulsed laser deposition

V.N. Kulkarni,S.R. Shinde,Y.G. Zhao,R.J. Choudhary,S.B. Ogale,R.L. Greene,T. Venkatesan
DOI: https://doi.org/10.1016/j.nimb.2004.01.185
2004-01-01
Abstract:We present the results of ion channeling and 3.045 MeV He+ oxygen resonant backscattering along with the results of magnetic and electric characterization experiments performed on thin films of Co doped TiO2 and La0.5Sr0.5TiO3 oxides deposited on (0 0 1) LaAlO3 substrates using the pulsed laser deposition technique. These films exhibit Curie temperature well above 300 K and hence offer potential use for spintronic devices. In the case of Co doped TiO2 films the magnetic data have been understood in the light of channeling results, which showed non-substitutionality of Co atoms for the films deposited at 700 degreesC, and their incorporation in the matrix by either annealing at a higher temperature of 875 degreesC or deposition at this temperature. In the case of the Co doped La0.5Sr0.5TiO3, the resistivity data for the films deposited at different oxygen pressures correlate well with the oxygen contents of the films obtained by resonant backscattering. (C) 2004 Elsevier B.V. All rights reserved.
What problem does this paper attempt to address?