Ferroelectric domain wall motion and related internal friction in TGS crystal

Zhongming Liu,Xiaohua Chen,Huimin Shen,Yening Wang,Huifang Young,P. C. W. Fung

DOI: https://doi.org/10.1002/pssa.2211160260

1989-01-01

Abstract:On etudie le mouvement des parois de domaines ferroelectriques dans un cristal TGS dans lequel la transition de phase ordre-desordre ferroelectrique du second ordre prend place a la temperature de Curie

What problem does this paper attempt to address?

Effect of Dislocation Walls on the Polarization Switching of a Ferroelectric Single Crystal

H. H. Wu,J. Wang,S. G. Cao,T. Y. Zhang

DOI: https://doi.org/10.1063/1.4809945

IF: 4

2013-01-01

Applied Physics Letters

Abstract:Phase field simulations were conducted to study the influence of dislocation walls on the domain configuration and polarization switching behavior of a ferroelectric single crystal. The simulation results show that the domain configuration and polarization switching behavior depend highly on thedislocation spacing in the dislocation wall. The ferroelectric properties can be greatly improved by reducing the coercive field and meanwhile enhancing the remanent polarization if an appropriate density of dislocations is introduced at high temperature. The phase field simulations also put insights into the mechanism of polarization switching.
Intrinsic threshold electric field for domain wall motion in ferroelectrics based on discretized phase-field model

Huanhuan Tian,Jianguo Yang,Ming Liu

2024-09-19

Abstract:With the development of ferroelectric memories, it is becoming increasingly important to understand the ferroelectric switching behaviors at small applied electric fields. In this letter, we use a discretized phase-field model to systematically investigate the intrinsic threshold electric field (TEF) to drive flat 180$^\circ$ and 90$^\circ$ domain walls (DWs), and show that the results are qualitatively consistent with existing first-principle studies and experiments at cryogenic temperature. In addition, this work suggests that the activation electric field (AEF) observed in experiments at room temperature can be interpreted as the average of TEF behaviors of DWs with different curvatures, rather than explained by the traditional thermal nucleation theory. This work improves the understanding of DW motion kinetics at small applied fields, and shows that the mesh size and orientation are both important for the phase-field modeling of the above process.

Materials Science
Phase Field Crystal Simulation of the Effect of Temperature on Low-Angle Symmetric Tilt Grain Boundary Dislocation Motion

Qi Ke-Wu,Zhao Yu-Hong,Guo Hui-Jun,Tian Xiao-Lin,Hou Hua

DOI: https://doi.org/10.7498/aps.68.20190051

IF: 0.906

2019-01-01

Acta Physica Sinica

Abstract:For crystal materials, the grain boundary structure is complex, which is usually the place in which stress concentration and impurity accumulate. Grain boundary structure and movement have a great influence on the macroscopic properties of crystal materials, therefore, it is of great significance to study the microstructure of grain boundary. With the phase filed crystal approach, the structure of low-angle symmetric tilt grain boundary and dislocation motion at nanoscale are studied. The low-angle symmetric tilt grain boundary structure can be described by a dislocation model, in which the grain boundary can be regarded as consisting of a series of edge dislocations at a certain distance. For a relaxation process and applied stress process, the position change of dislocation motion at grain boundaries and the change of free energy density of the system are observed. Furthermore, we also analyze the influence of temperature on the grain boundary structure and the dislocation motion. In the relaxation process, the free energy of the crystal system is higher under high temperature conditions. The results show that the motion of dislocation pairs in the grains can consume the internal energy and release the distortion energy stored at the grain boundary, and thus making the system more stable and the energy reach the lowest value earlier. Simulation results show that the lower the temperature of the system, the faster the free energy density decreases, the faster the regular arrangement rate of atoms increases, the shorter the time required for the free energy density to reach a stable state becomes. And when the grain boundary reaches a steady state, the arrangement of the dislocations becomes more and more regular and arranges in a straight line. For an applied stress process, with the decrease of temperature, the time required for the first encounter of dislocation pairs and the time required for the formation of single crystal become longer, and it takes more time for the first encounter of dislocation pairs in crystals to disappear completely. Further studies also show that with the decrease of temperature, the free energy density exhibits a multi-stage ascending and descending process. The rising process of energy curve corresponds to the stage of dislocation climbing along the grain boundary, and the decline process corresponds to the stage of dislocation decomposition and encounter annihilation. At the same time, the dislocation pairs' reaction becomes more complex. Finally, the dislocations annihilate with each other.
Ferroelectric Domain Switching Pathways—from Grain Boundary to Grain Body

Xuhui Lou,Xu Hou,Yujun Chen,Shaohan Cui,Jie Wang,Qingyuan Wang,Haidong Fan,Xiaobao Tian

DOI: https://doi.org/10.1063/5.0146252

IF: 4

2023-01-01

Applied Physics Letters

Abstract:Grain boundaries (GBs) are one of the main factors influencing the polar domain evolution of polycrystalline ferroelectrics. However, domain switching from GBs to grains remains an unsolved aspect. Previous microscopic GB assumptions hinder such theoretical investigations, assuming that the structure and properties of GB are independent of the misorientation of adjacent grains. This work investigates the competition between the energy densities and domain-switching pathways based on the formation mechanism of the GB model. It is found that the domain-switching pathways in polycrystalline ferroelectrics follow three rules: (1) domain switching occurs near low-energy-density GBs; (2) the development of domain-switching pathway originates near the low-energy-density GBs. This pathway ultimately influences the overall domain-switching process, which follows the energy minimization principle; and (3) the domain-switching trend expands to both sides of the pathways after complete formation. The domain evolution rules for polycrystalline ferroelectric materials proposed in this work are conducive to improving the performance of ferroelectric ceramics via GB engineering.
Arrangement and Decomposition of Grain Boundary Dislocations: Two-Mode Phase-Field Crystal Simulation

Huanqing Li,Xiaona Wang,Haibin Zhang,Xiaolin Tian,Hua Hou,Yuhong Zhao

DOI: https://doi.org/10.3389/fmats.2022.875519

2022-01-01

Frontiers in Materials

Abstract:The grain-boundary dislocation arrangement and decomposition during constant-volume deformation of a nanoscale bi-crystal system in fcc-structured materials were studied by using the two-mode phase-field crystal (2PFC) method. The effects of different grain boundary misorientations (GBMs) and tensile deformation directions on the dislocation arrangement and decomposition are analyzed. In three different symmetrical tilt grain boundaries evaluated by PFC, the atomic density profile of grain boundaries changed periodically at equilibrium. The initial grain boundary dislocation arrangement of the three samples is almost the same when tensile deformation is applied to the samples in the x- or y- direction, and all are symmetrically arranged in a “bowknot ”structure. The stress at the grain boundary is concentrated with the increase of strain, and dislocation decomposition can effectively reduce the stress concentration. The time steps of dislocation decomposition at grain boundaries decreases with increasing strain rate. This work facilitates the application of PFC in the analysis of grain-boundary mechanics in an extended range of materials.
Phase Field Crystal Study of Grain Boundary Structure and Annihilation Mechanism in Low-Angle Grain Boundary

Huijun Guo,Yuhong Zhao,Yuanyang Sun,Jinzhong Tian,Hua Hou,Kewu Qi,Xiaolin Tian

DOI: https://doi.org/10.1016/j.spmi.2019.03.020

IF: 3.22

2019-01-01

Superlattices and Microstructures

Abstract:Using the advantage of phase field crystal model in microstructure evolution, we simulated the details of two-dimensional triangular phase on atomic scale and diffusion time scale. The results show that the annihilation process of grain boundaries can be divided into three stages. The energy changes of the system at different stages are accurately calculated and the process is quantitatively analyzed. By comparing the atomic density distributions at different temperatures and orientation angles, it is shown that the grain boundary is sensitive to temperature. Within the range of low-angle, the increase of orientation angle inhibits the occurrence of annihilation and decreases the grain boundary migration rate. Under the applied stress, the orientation angle has a certain response relationship with the yield strength of the material. This work has some practical significance in the influence of microstructure on the mechanical properties of materials.
Direct Atomic-Scale Visualization of the 90° Domain Walls and Their Migrations in Hf0.5Zr0.5O2 Ferroelectric Thin Films

Yunzhe Zheng,Yuke Zhang,Tianjiao Xin,Yilin Xu,Shuangquan Qu,Junding Zheng,Zhaomeng Gao,Qilan Zhong,Yiwei Wang,Xiaoyu Feng,Yonghui Zheng,Yan Cheng,Ruiwen Shao,Fang Lin,Xiaoling Lin,He Tian,Rong Huang,Chungang Duan,Hangbing Lyu

DOI: https://doi.org/10.1016/j.mtnano.2023.100406

IF: 10.3

2023-01-01

Materials Today Nano

Abstract:Domain walls (DWs) play an essential role in altering the polarization and related properties of ferroelectric materials, and are regulated by the mechanism of changing atomic configuration. However, compared with perovskite ferroelectrics, the DWs in hafnia-based fluorite-structure ferroelectric is experimentally lacking, especially with regard to detailed studies of atomic-scale structures. The present work used spherical aberration-corrected transmission electron microscope combined with in-situ technique to ascertain the origin, atomic arrangements of 90° DWs in Hf0.5Zr0.5O2 thin films. Different types of 90° DWs were found to exhibit varying migration behaviors in response to the concentration of oxygen vacancies. Point defects and corresponding changes in the local strain field are proposed to drive DW switching in this material. These new insights into the atomic-scale characteristics of 90° DWs are expected to assist in elucidating the structure of DWs and improve our understanding of the ferroelectric characteristics of new type hafnia-based materials.
Thermal structural disorder and melting transition in high-angle grain-boundary: a molecular-dynamics study

Shijin Zhao,Yongchun Wang,Jianqiang You,Qibin Yang,Leguo Zhou,Hengqiang Ye

1998-01-01

Acta Metallurgica Sinica (English Letters)

Abstract:A structural transition in the high-angle tilt grain-boundary (GB) was investigated by molecular-dynamics simulation. The calculations have been performed at various temperatures and the thermodynamic melting point Tm of the model system was determined by using a many-body potential fitted to copper. A thermal disorder transition in the GB region occurs well below the melting point. The results indicate that such a transition is a continuous process and there is no evidence of pre-melting, which is entirely in accord with experimental results and theoretical prediction. Moreover, it is also observed that melting initiates at the interface and then propagates into the bulk quickly at or above Tm.
Study of Ferroelectric Phase Transition in Triglycine Fluoberyllate Crystal

Prabhat Chandra Khanduri,Trilok Chandra Upadhyay

DOI: https://doi.org/10.1080/00150193.2023.2273714

2024-01-30

Ferroelectrics

Abstract:Triglycine fluoberyllate (TGFB) is an important member of hydrogen bonded order disorder type ferroelectrics, resembling other ferroelectrics which belongs to its group it experiences phase transition at certain temperature. In current theoretical work by utilizing Green's function (double time thermal dependent) and modified pseudospin two-sublattice mode model we are analyzing ferroelectric behavior of TGFB crystal. For this purpose we are evaluating expressions for shift (Δ), width (Γ), soft mode frequency (Ω̂), dielectric constant (ε) and loss tangent (tan δ), after that by utilizing model values for TGFB crystal thermal dependence of Ω̂, ε and tan δ have been calculated. Comparison illustrates that theoretical results obtained by us are in good harmony with experimental results.

materials science, multidisciplinary,physics, condensed matter
Electric Field Control of Multiferroic Domain Wall Motion

Hong-Bo Chen,Ye-Hua Liu,You-Quan Li

DOI: https://doi.org/10.1063/1.4870711

IF: 2.877

2014-01-01

Journal of Applied Physics

Abstract:The dynamics of a multiferroic domain wall in which an electric field can couple to the magnetization via inhomogeneous magnetoelectric interaction is investigated by the collective-coordinate framework. We show how the electric field is capable of delaying the onset of the Walker breakdown of the domain wall motion, leading to a significant enhancement of the maximum wall velocity. Moreover, we show that in the stationary regime the chirality of the domain wall can be efficiently reversed when the electric field is applied along the direction of the magnetic field. These characteristics suggest that the multiferroic domain wall may provide a new prospective means to design faster and low-power-consumption domain wall devices.
Micro-/Macro-Responses of A Ferroelectric Single Crystal with Domain Pinning and Depinning by Dislocations

H. H. Wu,J. Wang,S. G. Cao,L. Q. Chen,T. Y. Zhang

DOI: https://doi.org/10.1063/1.4826532

IF: 2.877

2013-01-01

Journal of Applied Physics

Abstract:Phase field simulations are conducted to investigate the micro-structural signature and the macro-response of a ferroelectric single crystal with domain pinning and depinning phenomena by dislocation arrays. It is shown that due to the presence of the dislocation arrays, a domain with polarizations antiparallel to an applied field can survive under the small amplitude of applied field. The residual domain serves as a pre-existing nucleus during the following macroscopic switching via only domain wall motion. The pinned domain will be depinned when the external electric field amplitude exceeds a critical value, which highly depends on the dislocation spacing in the dislocation array. Due to the pinning and depinning effect, an asymmetric hysteresis loop of polarization versus electric field might appear when a bias field is applied.
Domain wall architecture in tetragonal ferroelectric thin films

Gabriele De Luca,Marta D. Rossell,Jakob Schaab,Nathalie Viart,Manfred Fiebig,Morgan Trassin

DOI: https://doi.org/10.1002/adma.201605145

2017-02-22

Abstract:Domain walls in ferroelectrics exhibit a plethora of phases and functionalities not found in the bulk. The interplay of electrostatic, chemical, topological, and distortive inhomogeneities at the walls can be so complex, however, that this obstructs their technological performance. In tetragonal ferroelectrics like PbZrxTi1-xO3, for example, the desired functional 180° domain walls within out-of-plane-polarized c-domains are interspersed by in-plane-polarized a-domains and the associated network of domain walls remains challenging to analyze. Here we use a combination of STEM and optical second harmonic generation (SHG) to determine the relation between strain, film thickness, local electric fields and the resulting domain and domain-wall structures across the entire thickness of a set of PZT films. We quantify the distribution of a-domains in the c-domain matrix of the films. Using locally applied electric fields we control the a/c distribution and induce the technologically preferable 180° domain walls. We find that these voltage induced walls are tilted and exhibit a mixed Ising-Néel type transverse rotation of polarization across the wall with a specific nonlinear optical response.

Mesoscale and Nanoscale Physics
Electrical switching of ferro-rotational order in nanometre-thick 1T-TaS 2 crystals

Gan Liu,Tianyu Qiu,Kuanyu He,Yizhou Liu,Dongjing Lin,Zhen Ma,Zhentao Huang,Wenna Tang,Jie Xu,Kenji Watanabe,Takashi Taniguchi,Libo Gao,Jinsheng Wen,Jun-Ming Liu,Binghai Yan,Xiaoxiang Xi

DOI: https://doi.org/10.1038/s41565-023-01403-5

IF: 38.3

2023-05-12

Nature Nanotechnology

Abstract:Hysteretic switching of domain states is a salient characteristic of all ferroic materials and the foundation for their multifunctional applications. Ferro-rotational order is emerging as a type of ferroic order that features structural rotations, but control over state switching remains elusive due to its invariance under both time reversal and spatial inversion. Here we demonstrate electrical switching of ferro-rotational domain states in the charge-density-wave phases of nanometre-thick 1T-TaS 2 crystals. Cooling from the high-symmetry phase to the ferro-rotational phase under an external electric field induces domain state switching and domain wall formation, which is realized in a simple two-terminal configuration using a volt-scale bias. Although the electric field does not couple with the order due to symmetry mismatch, it drives domain wall propagation to give rise to reversible, durable and non-volatile isothermal state switching at room temperature. These results offer a route to the manipulation of ferro-rotational order and its nanoelectronic applications.

materials science, multidisciplinary,nanoscience & nanotechnology
Ferroelectric Domain Walls Approaching Morphotropic Phase Boundary

Jinghui Gao,Xinghao Hu,Yongbin Liu,Yan Wang,Xiaoqin Ke,Dong Wang,Lisheng Zhong,Xiaobing Ren

DOI: https://doi.org/10.1021/acs.jpcc.6b11595

2017-01-01

Abstract:Domain walls play an important role in tailoring the properties of ferroic materials. We employ a Landau-Ginzburg thermodynamic model to investigate the ferroelectric domain walls around the morphotropic phase boundary (MPB) which contribute to the large piezoelectric response, including 90 degrees domain wall for tetragonal (T) symmetry and 109 degrees and 71 degrees domain walls for rhombohedral (R) symmetry. The domain wall energy for each type of domain wall has been analytically calculated by quasi-one-dimensional solution of the spatial evolution for polarization. Our results suggest that the domain wall energies for both T-T and R-R domains decrease as the composition approaches MPB accompanied by the vanishing of polarization anisotropy, which can be-viewed as the origin for the experimentally observed miniaturized domains. In addition, the reduced domain wall energy caused by the polarization anisotropy vanishing is responsible for the large piezoelectric response due to the displacement of domain walls.
Temperature Induced, Reversible Switching of Ferro-Rotational Order Coupled to Superlattice Commensuralibity

Weiyan Qi,Jingwei Dong,Stefano Ponzoni,Guénolé Huitric,Romain Grasset,Yannis Laplace,Laurent Cario,Marino Marsi,Evangelos Papalazarou,Alberto Zobelli,Alexandr Alekhin,Yann Gallais,Azzedine Bendounan,Luca Perfetti

DOI: https://doi.org/10.1021/acs.nanolett.4c02546

IF: 10.8

2024-10-14

Nano Letters

Abstract:High-quality 1T-TaS(2) crystals are investigated by angle-resolved photoelectron spectroscopy, Raman spectroscopy, and low-energy electron diffraction. The Ferro-Rotational Order (FRO) of the charge density wave switches configuration at the transition between the commensurate and the nearly commensurate phase. This process requires samples without built-in or externally induced strain. Moreover, temperature gradients generated by a focused laser beam can be employed in order to freeze the...

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Ferroelectric Polarization Switching Dynamics and Domain Growth of Triglycine Sulfate and Imidazolium Perchlorate

He Ma,Wenxiu Gao,Junling Wang,Tom Wu,Guoliang Yuan,Junming Liu,Zhiguo Liu

DOI: https://doi.org/10.1002/aelm.201600038

IF: 6.2

2016-01-01

Advanced Electronic Materials

Abstract:The weak bond energy and large anisotropic domain wall energy induce many special characteristics of the domain nucleation, growth, and polarization switch in triglycine sulfate (TGS) and imidazolium perchlorate (IM), two typical molecular ferroelectrics. Their domain nucleation and polarization switch are rather slower than those of conventional oxide ferroelectrics, which may be due to the weaker bond energy of hydrogen bond or van der Waals bond than that of ionic bond. These chemical bonds dominate the elastic energy, with the latter being an important component of domain wall energy and playing an important role in domain nucleation and domain growth. The ratio of anisotropic domain wall energy to Gibbs free energy is large in TGS and IM, which allows a favorable domain shape and a special domain evolution under a certain electric field. Therefore, this study not only sheds light on the physical nature but also indicates the application direction for molecular ferroelectrics.
Structural and thermal transport properties of ferroelectric domain walls in GeTe from first principles

Đorđe Dangić,Éamonn D. Murray,Stephen Fahy,Ivana Savić

DOI: https://doi.org/10.1103/PhysRevB.101.184110

2020-05-15

Abstract:Ferroelectric domain walls are boundaries between regions with different polarization orientations in a ferroelectric material. Using first-principles calculations, we characterize all different types of domain walls forming on ( ), (111), and ( ) crystallographic plane... [Phys. Rev. B 101, 184110] Published Thu May 14, 2020
Terahertz Reading Of Ferroelectric Domain Wall Dielectric Switching

Man Zhang,Zhe Chen,Yajun Yue,Tao Chen,Zhongna Yan,Qinghui Jiang,Bin Yang,Mirva Eriksson,Jianhua Tang,Dou Zhang,Zhijian Shen,Isaac Abrahams,Haixue Yan

DOI: https://doi.org/10.1021/acsami.1c00523

IF: 9.5

2021-01-01

ACS Applied Materials & Interfaces

Abstract:Ferroelectric domain walls (DWs) are important nanoscale interfaces between two domains. It is widely accepted that ferroelectric domain walls work idly at terahertz (THz) frequencies, consequently discouraging efforts to engineer the domain walls to create new applications that utilize THz radiation. However, the present work clearly demonstrates the activity of domain walls at THz frequencies in a lead-free Aurivillius phase ferroelectric ceramic, Ca0.99Rb0.005Ce0.005Bi2Nb2O9, examined using THz-time-domain spectroscopy (THz-TDS). The dynamics of domain walls are different at kHz and THz frequencies. At low frequencies, domain walls work as a group to increase dielectric permittivity. At THz frequencies, the defective nature of domain walls serves to lower the overall dielectric permittivity. This is evidenced by higher dielectric permittivity in the THz band after poling, reflecting decreased domain wall density. An elastic vibrational model has also been used to verify that a single frustrated dipole in a domain wall represents a weaker contribution to the permittivity than its counterpart within a domain. The work represents a fundamental breakthrough in understanding the dielectric contributions of domain walls at THz frequencies. It also demonstrates that THz probing can be used to read domain wall dielectric switching.
Current-induced domain wall motion in a van der Waals ferromagnet Fe 3 GeTe 2

Wenjie Zhang,Tianping Ma,Binoy Krishna Hazra,Holger Meyerheim,Prajwal Rigvedi,Zihan Yin,Abhay Kant Srivastava,Zhong Wang,Ke Gu,Shiming Zhou,Shouguo Wang,See-Hun Yang,Yicheng Guan,Stuart S. P. Parkin

DOI: https://doi.org/10.1038/s41467-024-48893-y

IF: 16.6

2024-06-07

Nature Communications

Abstract:The manipulation of spin textures by spin currents is of fundamental and technological interest. A particularly interesting system is the 2D van der Waals ferromagnet Fe 3 GeTe 2, in which Néel-type skyrmions have recently been observed. The origin of these chiral spin textures is of considerable interest. Recently, it was proposed that these derive from defects in the structure that lower the symmetry and allow for a bulk vector Dzyaloshinsky-Moriya interaction. Here, we demonstrate current-induced domain wall motion in Fe 3 GeTe 2 flakes, in which the maximum domain wall velocity is an order of magnitude higher than those reported in previous studies. In heterostructures with Pt or W layers on top of the Fe 3 GeTe 2 flakes, domain walls can be moved via a combination of spin transfer and spin-orbit torques. The competition between these torques leads to a change in the direction of domain wall motion with increasing magnitude of the injected current.

multidisciplinary sciences
Ferroelastic Domain Switching Dynamics under Electrical and Mechanical Excitations

Peng Gao,Jason Britson,Christopher T. Nelson,Jacob R. Jokisaari,Chen Duan,Morgan Trassin,Seung-Hyub Baek,Hua Guo,Linze Li,Yiran Wang,Ying-Hao Chu,Andrew M. Minor,Chang-Beom Eom,Ramamoorthy Ramesh,Long-Qing Chen,Xiaoqing Pan

DOI: https://doi.org/10.1038/ncomms4801

IF: 16.6

2014-01-01

Nature Communications

Abstract:In thin film ferroelectric devices, switching of ferroelastic domains can significantly enhance electromechanical response. Previous studies have shown disagreement regarding the mobility or immobility of ferroelastic domain walls, indicating that switching behaviour strongly depends on specific microstructures in ferroelectric systems. Here we study the switching dynamics of individual ferroelastic domains in thin Pb(Zr 0.2 ,Ti 0.8 )O 3 films under electrical and mechanical excitations by using in situ transmission electron microscopy and phase-field modelling. We find that ferroelastic domains can be effectively and permanently stabilized by dislocations at the substrate interface while similar domains at free surfaces without pinning dislocations can be removed by either electric or stress fields. For both electrical and mechanical switching, ferroelastic switching is found to occur most readily at the highly active needle points in ferroelastic domains. Our results provide new insights into the understanding of polarization switching dynamics as well as the engineering of ferroelectric devices.

Ferroelectric domain wall motion and related internal friction in TGS crystal

Effect of Dislocation Walls on the Polarization Switching of a Ferroelectric Single Crystal

Intrinsic threshold electric field for domain wall motion in ferroelectrics based on discretized phase-field model

Phase Field Crystal Simulation of the Effect of Temperature on Low-Angle Symmetric Tilt Grain Boundary Dislocation Motion

Ferroelectric Domain Switching Pathways—from Grain Boundary to Grain Body

Arrangement and Decomposition of Grain Boundary Dislocations: Two-Mode Phase-Field Crystal Simulation

Phase Field Crystal Study of Grain Boundary Structure and Annihilation Mechanism in Low-Angle Grain Boundary

Direct Atomic-Scale Visualization of the 90° Domain Walls and Their Migrations in Hf0.5Zr0.5O2 Ferroelectric Thin Films

Thermal structural disorder and melting transition in high-angle grain-boundary: a molecular-dynamics study

Study of Ferroelectric Phase Transition in Triglycine Fluoberyllate Crystal

Electric Field Control of Multiferroic Domain Wall Motion

Micro-/Macro-Responses of A Ferroelectric Single Crystal with Domain Pinning and Depinning by Dislocations

Domain wall architecture in tetragonal ferroelectric thin films

Electrical switching of ferro-rotational order in nanometre-thick 1T-TaS 2 crystals

Ferroelectric Domain Walls Approaching Morphotropic Phase Boundary

Temperature Induced, Reversible Switching of Ferro-Rotational Order Coupled to Superlattice Commensuralibity

Ferroelectric Polarization Switching Dynamics and Domain Growth of Triglycine Sulfate and Imidazolium Perchlorate

Structural and thermal transport properties of ferroelectric domain walls in GeTe from first principles

Terahertz Reading Of Ferroelectric Domain Wall Dielectric Switching

Current-induced domain wall motion in a van der Waals ferromagnet Fe 3 GeTe 2

Ferroelastic Domain Switching Dynamics under Electrical and Mechanical Excitations