Semiconductor Optical Amplifier Optical Gate With Graded Strained Bulk-Like Active Structure

Ry Zhang,J Dong,Zw Feng,F Zhou,Hl Tian,Hy Shu,Lj Zhao,J Bian,W Wang
DOI: https://doi.org/10.1117/1.1539053
IF: 1.3
2003-01-01
Optical Engineering
Abstract:A novel semiconductor optical amplifier (SOA) optical gate with a graded strained bulk-like active structure is proposed. A fiber-to-fiber gain of 10 dB when the coupling loss reaches 7 dB/factet and a polarization insensitivity of less than 0.9 dB for multiwavelength and different power input signals over the whole operation current are obtained. Moreover, for our SOA optical gate, a no-loss current of 50 to 70 mA and an extinction ratio of more than 50 dB are realized when the injection current is more than no-loss current, and the maximum extinction ratio reaches 71 dB, which is critical for crosstalk suppression. (C) 2003 society of Photo-Optical Instrumentation Engineers.
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