Abstract:Structural and phonon properties, formation and cohesive energies, and electronic structures of ${\mathrm{II}}_{A}$-IV-${\mathrm{N}}_{2}$ (where ${\mathrm{II}}_{\mathrm{A}}=\mathrm{Be}$ or Mg; $\mathrm{IV}=\mathrm{Si}$, Ge, or Sn) monolayers with a graphenelike planar structure are systematically studied. Stability and property evolution with the variation of constituent group ${\mathrm{II}}_{A}$ and group IV elements are revealed. Dynamical and elastic stability of ${\mathrm{II}}_{A}$-IV-${\mathrm{N}}_{2}$ monolayers is justified by phonon and elasticity calculations, respectively. Their wide band gaps ranging from 3.32 to 5.61 eV are predicted by the $GW$ method on top of density functional calculations. The fat-band analysis and charge-density calculation of selected eigenstates unveil the effect of chemical environment and elemental substitution on electronic states near the band-gap region. The quasi-free-electron state and the parabolic dispersion of the lowest conduction band are advantageous for electron transport in electronic applications. A close examination of the band alignment and structural similarity between monolayers of ${\mathrm{II}}_{A}$-IV-${\mathrm{N}}_{2}$ compounds and III nitrides indicates that it is possible to form type-I or type-II heterostructures and alloy systems composed of monolayers of ${\mathrm{II}}_{A}$-IV-${\mathrm{N}}_{2}$ compounds and III nitrides. The findings in this work will promote research aiming at the synthesis, characterization, and application of novel two-dimensional materials, alloys, and heterostructures.

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