Abstract:Semiconductor superlattices have been extensively investigated for thermoelectric applications, to explore the effects of compositions, interface structures, and lattice strain environments on the reduction of thermal conductivity, and improvement of efficiency. Most studies assumed that their electronic properties remain unaffected compared to their bulk counterparts. However, recent studies demonstrated that electronic properties of silicon (Si)/germanium (Ge) superlattices show significant variations depending on compositions and growth substrates. These studies used a constant relaxation time approximation, and ignored the effects of electron scattering processes. Here, we consider electron scattering with phonons and ionized impurities, and report first-principles calculations of electronic transport properties including the scattering rates. We investigate two classes of Si/Ge superlattices: superlattices with varied compositions grown on identical substrates and with identical compositions but grown on different substrates. We illustrate the relationship between the energy bands of the superlattices and the electron-phonon relaxation times. We model the electron-ionized impurity interaction potentials by accounting for the in-plane and the cross-plane structural anisotropy. Our analysis reveals that the inclusion of electron-phonon and electron-impurity scattering processes can lead to ~1.56-fold improved peak power-factors, compared to that of bulk Si. We observe that superlattices can also display dramatically reduced power-factors for specific lattice strain environments. Such reduction could cancel out thermoelectric efficiency improvements due to reduced thermal conductivities. Our study provides insight to predict variation of electronic properties due to changes in lattice strain environments, essential for designing superlattices with optimized electronic properties.

On the Modeling of Lattice Thermal Conductivity in Semiconductor Quantum Dot Superlattices

Phonon-hopping Thermal Conduction in Quantum Dot Superlattices

Modified Series Model for Cross-Plane Thermal Conductivity of Short-Period Si/Ge Superlattices

Calculation of the effective thermal conductivity of a superlattice based on the Boltzmann transport equation using first-principle calculations

Interface Effects on Lattice Thermal Conductivities of Superlattices

Two-Dimensional Molecular Dynamics Simulation of the Thermal Conductance of Superlattices

The Out-of-plane Thermal Conductivity of Si/Ge Superlattice Based On the Serious Model

Ab initio Calculation of the Effective Thermal Conductivity Coefficient of a Superlattice Using the Boltzmann Transport Equation

Acoustic Attenuation and Optical-Absorption Effects on Light Scattering by Acoustic Phonons in Superlattices.

Theory of Light Scattering by Longitudinal-Acoustic Phonons in Superlattices.

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

Electron-Transport Through A Quantum-Dot Superlattice

Simulation Study of Phonon Transport at the GaN/AlN Superlattice Interface: Ballistic and Non-Equilibrium Phenomena

Lattice Dynamics Investigations Of Phonon Thermal Conductivity Of Si/Ge Superlattices With Rough Interfaces

Effect of Electron-Phonon and Electron-Impurity Scattering on Electronic Transport Properties of Silicon/Germanium Superlattices

Electrical and Thermal Conductivity of Ge∕Si Quantum Dot Superlattices

Quantum Dot Superlattices And Their Conductance

Ballistic transport of long wavelength phonons and thermal conductivity accumulation in nanograined silicon-germanium alloys

Structural, Dynamic, and Vibrational Properties during Heat Transfer in Si/Ge Superlattices: A Car-Parrinello Molecular Dynamics Study

A Scattering Rate Model For Accelerated Evaluation Of Lattice Thermal Conductivity Bypassing Anharmonic Force Constants

Thermal expansion and isotopic composition effects on lattice thermal conductivities of crystalline silicon