Abstract:Dislocation transmission across grain boundary (GB) and activation of dislocation source in adjacent grains are considered common features of dislocation-GB interactions in regulating mechanical properties and behaviors of metallic materials and structures. However, it is currently unclear which of dislocation transmission and dislocation source activation plays the dominant role in regulating dislocation-GB interaction. To study the competition between dislocation transmission and dislocation source activation, a theoretical framework is established based on a dislocation pile-up model. It is found that both dislocation transmission and dislocation source activation exhibit strong dependence on the GB misorientation angle. The critical transmission stress derived based on an energy method also depends on the grain size in a scaling form similar to the Hall-Petch relation. The outgoing slip systems during dislocation transmission are successfully predicted and agree with experimental observations. Regarding the dislocation source activation, the critical activation stress is investigated by examining the local stress fields generated by single and multiple slip dislocation pile-ups. It is found that compared with single slip dislocation pile-up, the result of multiple slip dislocation pile-ups displays lower critical activation stresses and exhibits feature of sensitivity to loading direction, interpreting the reported results of dislocation source activation in polycrystals. Further comparison between dislocation transmission and dislocation source activation for ⟨100⟩ tilt GBs indicates that the dislocation transmission prevails at low angle GB, while dislocation source activation is prone to occur at high angle GB. Our theoretical studies quantify the dislocation-GB interaction induced by dislocation pile-ups, shed light on the competition between dislocation transmission and dislocation source activation, and might provide essential guidance for high-performance metallic material design.

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