Metal–Semiconductor–Metal Ultraviolet Photodetectors Based on <formula formulatype="inline"><tex Notation="TeX">$\hbox{TiO}_{2}$</tex></formula> Films Deposited by Radio-Frequency Magnetron Sputtering

Huolin Huang,Weifeng Yang,Yannan Xie,Xiaping Chen,Zhengyun Wu
DOI: https://doi.org/10.1109/LED.2010.2045876
IF: 4.8157
2010-01-01
IEEE Electron Device Letters
Abstract:Metal-semiconductor-metal ultraviolet (UV) photodetectors (PDs) with Au electrodes, based on TiO2 thin films prepared by radio-frequency magnetron sputtering, are fabricated and characterized. The PDs exhibit a low dark current of 9.73 pA at 5-V bias and a high breakdown voltage of over 90 V, owing to the achievement of high-quality stoichiometric TiO2 films. Meanwhile, the high responsivity with a cutoff wavelength at around 380 nm and a large UV-to-visible rejection ratio (310 versus 400 nm) of more than three orders of magnitude are obtained, which suggest that the fabricated PDs are very promising in UV detection applications.
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