Catalyst‐Free Vapor–Solid Deposition Growth of β‐Ga2O3 Nanowires for DUV Photodetector and Image Sensor Application
Zhi-Xiang Zhang,L. Luo,Chao Xie,Xiao-wei Tong,Li Wang,Mengru Ma,Chunyan Wu,Wenhua Yang,Xing‐Tong Lu
DOI: https://doi.org/10.1002/adom.201901257
IF: 9
2019-10-15
Advanced Optical Materials
Abstract:Photodetection in the solar‐blind deep‐ultraviolet (DUV) regime (200–280 nm) has received significant attention for its many critical applications in military and civil areas. In this study, a vapor–solid synthesis technique for catalyst‐free growth of single‐crystalline β‐Ga2O3 nanowires is developed. A photodetector made of the nanowires is highly sensitive to 265 nm DUV illumination with excellent photoresponse performance. The performance parameters including Ilight/Idark ratio, responsivity, specific detectivity and response speed can attain ≈103, ≈233 A W−1, ≈8.16 × 1012 Jones, and 0.48/0.04 s, respectively. Additionally, the detector has an abrupt response cutoff wavelength at ≈290 nm with a reasonable DUV/visible (250–405 nm) rejection ratio exceeding 102. It is also found that the device can operate properly at a large applied bias of 200 V with the responsivity being enhanced to as high as ≈1680 A W−1. Moreover, such a nanowires‐based photodetector can function as a DUV light image sensor with a reasonable spatial resolution. Holding the above advantages, the present DUV photodetector based on catalyst‐free grown β‐Ga2O3 nanowires possesses huge possibility for application in future DUV optoelectronics.
Engineering,Materials Science,Physics